to say nothing of stability of the electron beam.;SOLUTION: In addition to the current value of the electron beam used for exposure, the value of the current leaked from the electron beam is measured, and is compared with a current value to be supplied on a real-time basis to grasp the...
The current inside of the frame is in the form of\nelectron motion, but in the glass and polymer, it is in at least a large part attributable to the movement\nof ions."Electronics Newsweekly
Leakage current refers to the flow of charge that occurs when charge deviates from its intended path in metals and semiconductors, and instead moves through defects or surface layers. This current is typically caused by the presence of condensed water on insulators, which makes their surfaces conduc...
The leakage current in the dark and the photocurrent in zinc diffused GaAs diodes have been measured at room temperature in air, and the results have been explained qualitatively in terms of the channel effect. The theory of channel leakage current developed previonsly for Ge diodes has been sli...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
On the leakage current of present-day manufactured semiconductor junctions The reverse leakage current of p鈥搉 junctions usually has a non-negligible surface peripheral component. Experimental data presented for silicon junctions... VVN Obreja - 《Solid State Electronics》 被引量: 63发表: 2000年 Ele...
Power Electronics Control Systems PedroAmaro,FredericoSantos, inEncyclopedia of Electrical and Electronic Power Engineering, 2023 Reducing leakage currents A number of changes to the H–bridge circuit may be implemented to furtherreduce leakagecurrent. The most obvious change is to remove the logic gates...
Leakage current of CMOS circuit increases dramatically with the technology scaling down and has become a critical issue of high performance system. Subthre
- 《Ieice Transactions on Electronics》 被引量: 0发表: 1994年 Self-Controllable Voltage Based 4x4 Dynamic RAM Leakage Current Reduction Technique CMOS technology increased in level of importance to the point where it now clearly holds the center stage as the dominant VLSI technology. The memories ...
This paper proposes a solution for reducing the ground leakage current in transformerless single-phase grid-connected photovoltaic converters. This is obta... D Barater,G Buticchi,E Lorenzani,... - 《IEEE Transactions on Industrial Electronics》 ...