Two dimensional numerical analysis is used to demonstrate the tradeoff between breakdown voltage and improved short channel threshold falloff as the halo concentration is increased. For a given halo doping level, there is a maximum permitted drain voltage for each channel length which is limited by ...
For the first time,the influences of single HALO and double LDD(HLL) doping structures on the CNTFET are investigated.The results show that under the same gate-source and drain-source voltages,HLL-CNTFET reduces significantly the leakage current and the subthreshold swing and increases on-off ...
doping of Halo region 图3 Halo 区掺杂浓度不同时横向电场峰值的影响 Fig.3 The peak value of lateral field with different doping of Halo region 图4 Halo 区掺杂能量不同时碰撞离化率和电子注 入电流峰值的影响 Fig.4The peak value of generation rate due to impact ionization and hot electron injecti...
Abstract: A new device structure of polysilicon thin film transistor, Halo LDD P-Si TFT, has been proposed.The Halo structure device can restrain the SCE effectively, and improve the device performance greatly with good doping distribution in the Halo region.In this paper,influence of Halo proces...
(SchoolofInformationTechnology,JiangnanUniversity,Wuxi214122,China) Abstract:Anewdevicestructureofpolysiliconthinfilmtransistor,HaloLDDP—SiTFT,hasbeenproposed.TheHalostructuredevice canrestraintheSCEefectively,andimprovethedeviceperformancegreadywithgooddopingdistributionintheHaloregion.Inthispa- per,influenceofHalo...
Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect Halo ion implantation was adopted to reduce the short channel effect (SCE) of a buried channel p-MOSFET device on pseudomorphic Si0.70Ge0.30 layers. The st... YT Tang,C Cerrina,AM Waite,... - 《Sem...
N-type dopant is then implanted in the unmasked areas of the p-type silicon region 14 to form LDD and halo implants 28 in the source and drain regions of the n-channel transistor. The mask is then removed, and a first insulation layer 29 is deposited over the structure, as shown in ...
non-balance Green function theoretical frame under an open boundary condition through self-consistent solution of 3D-Poisson and Schr.dinger equations, and the influence of an asymmetric HALO-LDD doping strategy on the electrical properties of the GNRFET is analyzed and calculated by using the model...