In this paper the effect of Ge substitution on the lattice parameter of Br sodalite has been studied. The sodalite was grown as a powder by the hydrothermal method. Lattice parameter measurements show a linear increase in a o with increasing amounts of Ge. The compositions of the powders ...
Lattice Parameter and Density in Germanium-Silicon Alloys The lattice parameter and density of chemically analyzed samples of homogeneous Ge-Si alloy have been measured throughout the entire alloy system. The temperature dependence of the lattice parameter was measured from 25 to 800°. Composi... ...
aMethod for fabricating semiconductor device e.g. integrated circuit device, involves preventing lattice parameter of layer of semiconductor material from returning back to previous value, when changing temperature of layer after bonding 方法为制造半导体装置即。 集成电路设备,介入防止半导体材料层的格子参量返...
aThe lattice matching element controls a lattice parameter mismatch between the barrier layer and the conducting layer, where the barrier and conducting layers are made of barrier semiconductor material i.e. silicon, and conducting semiconductor material i.e. silicon-germanium, respectively, thus ensurin...
Lattice vibrational spectrum of germanium. J. Phys. Chem. Solids 8, 405–418 (1959). Article CAS Google Scholar Kunc, K. & Martin, R. M. Ab initio force constants of GaAs: a new approach to calculation of phonons and dielectric properties. Phys. Rev. Lett. 48, 406–409 (1982). ...
48 、The net stability and crystallization of the gel-glass was analyzed by energy of crystal lattice.───利用晶格能对凝胶玻璃的稳定性与析晶特性进行了定性分析。 49 、An arsenic atom can take the place of a germanium atom in the lattice.───一个砷原子能取代点阵子中的锗原子. 50 、Compa...
The increasing thermal conductivity is further supported by the temperature dependence of the Gruneisen parameter (Fig. 4c), which shows a roughly inverse relationship to thermal conductivity as illustrated in Fig. 4d. From 725 K to 850 K, both the increase in the TO mode frequencies and ...
A component of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter consists of an alternate succession of layers of a first type and layers of a second type deposited on the substrate. The lattice parameter of the first type of...
One of the five force constants that occur in this model is taken as a free parameter and is fitted to the experimental frequencies at the zone boundaries in the (100) and (111) directions. A good qualitative fit, substantially better than the corresponding fit in the case of germanium and...
aProvides a simple way of relaxing a strained layer made of silicon germanium whose lattice parameter is different from lattice parameter of the support substrate. 提供一个简单的方式relaxing被劳损的层数由格子参量是与支持基体不同的格子参量的硅锗制成。 [translate] ...