The existent data about GaAs lattice constant is rather contradictive. The lattice parameter in the thick GaAs single crystal layers grown by liquid-phase epitaxial technique and by MOCVD was determined with an accuracy of +-1路10~(-6) nm by Bond method. The lattice parameter of stoichiornet...
Two main parameters are of great interest for the growth of semiconductor materials: the band gap energy and the in-plane lattice constant. The first parameter defines directly the confinement for localized carriers in hetero-structures and determines the refractive index of the material. The second...
The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5渭m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic...
Lattice constant values and knowledge of crystal structure are needed to calculate distances between neighboring atoms in a crystal, as well as in determining some of the crystal's important physical and electrical properties. Note that, depending on the crystal structure, the distance between two ne...
Here again assuming c/a constant for the substrate and epilayer, mc = ma and Eq. (13) becomes (14)mc(1+2c13c33)=△ccs+2c13c33△aas Analogous to Eq. (10) for cubic lattice materials, Eq. (14) can be used to calculate the misfit mc of the epitaxial layer from the measurable qua...
AlAs is an important III-V semiconductor because of its excellent lattice constant, matching GaAs. El AlAs es un i m portante semiconductor 1 1 1 -V debido a su excelente constante de red que coincide con la del GaAs. Literature Here a is the lattice constant of silicon. Aquí a...
2-D Bravais lattice二维布拉维格子
lattice constant [′lad·əs ‚kän·stənt] (crystallography) A parameter defining the unit cell of a crystal lattice, that is, the length of one of the edges of the cell or an angle between edges. Also known as lattice parameter. ...
The Fixed Displacement method, as implied by its name, generates displacements of a fixed, predetermined magnitude in random directions for each atom in a given supercell. This approach allows for a distinct separation for harmonic force constant extraction across different structure configurations. We ...
55 、Based on the lattice dynamics with force-constant matrix, we investigated the vibrational properties of GaAs/AlAs superlattice.───主要内容包括:一、采用基于力常数的晶格动力学方法研究了超晶格( n×n)GaAs/AlAs晶格振动性质。 56 、The significance of the Niggli reduced cell is in its uniquenes...