Path-integral Monte Carlo simulations in the isothermal–isobaric ensemble have been carried out to study the dependence of the lattice parameter of silicon upon the isotopic mass. This computational method allows a quantitative and nonperturbative study of such anharmonic effect. Atomic nuclei ...
Here a is the lattice constant of silicon. Aquí a es la constante de red del silicio. Literature Also calculate the number density of Ga atoms in GaAs which has a lattice constant of 5.65 A. También calcule la densidad del número de átomos de Ga en el GaAs que tiene una const...
In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises...
be a suitable substrate material for electronic circuits integration of group III nitride materials because of it's small difference in lattice constant [1]... J Maeda,T Kasuya,Y Kimura,... 被引量: 0发表: 0年 The Precision and Accuracy in Measuring the Lattice Constant of Silicon with X-...
Porous Silicon Formation under Constant Anodization Conditions: Homogeneous Regime or Transition? This work studies the behavior of the porous silicon layer growth when varying wafer resistivity (p-type) and current density. It shows that under a consta... D Hamm,T Sakka,YH Ogata - 《Journal of...
2-D Bravais lattice二维布拉维格子
关键词: materials science germanium lattice vibrations silicon density elasticity functionals grueneisen constant phonons elements DOI: 10.1103/PhysRevB.26.3259 被引量: 758 年份: 1982 收藏 引用 批量引用 报错 分享 全部来源 求助全文 Semantic Scholar dx.doi.org adsabs.harvard.edu ResearchGate mendeley....
The spacing of the {2 2 0} lattice planes of a Si crystal, used to determine the Avogadro constant by counting silicon atoms, was measured by combined x-ray and optical interferometry to a relative accuracy of 3.5 × 10. The result is d=... E Massa,G Mana,U Kuetgens,... - 《Met...
(caesar),Bonn,Germany1EpitaxyofGaNonsiliconoffersaconsiderablecostadvantagerelativetogrowthonsapphireorSiCandthepotentialformonolithicintegrationofGaN-baseddeviceswithconventionalmicroelectronics.However,SisubstratespresentadditionalchallengesforGaNgrowth.Thick(>1µm)GaNepilayersoftencrackuponcoolingtoroomtemperatureduetothe...