University of Petroleum & Energy Studies Engineering Aptitude Test Ranked #42 among Engineering colleges in India by NIRF | Highest CTC 50 LPA , 100% Placements Register VIT Engineering Entrance Exam National level exam conducted by VIT University, Vellore | Ranked #11 by NIRF for Engg. | NAA...
Ph.D. Computer Science and Engineering Course Duration: 1 Year View All Courses Other Colleges in the Same Group JNTUH College of Engineering Hyderabad, Telangana JNTUH, School of Continuing and Distance Education - [SCDE] Hyderabad, Telangana Jawaharlal Nehru Technological University, School of ...
Infineon’s latest 200-300 V StrongIRFET™ devices are optimized for both high current and low RDS(on) making them the ideal solution for industrial applications. The flagship IRF200P222 offers a 40 percent increase in current carrying capability and 32 percent lower RDS(on) when compared to...
IR MOSFET™ 产品系列 功率MOSFET 的 IR MOSFET 系列采用成熟的硅工艺,为设计人员提供广泛的器件组合,以支持各种应用,如直流电机、逆变器、SMPS、照明、负载开关以及电池供电应用。为了便于设计,这些器件采用表面贴装和通孔封装等多种封装方式,带有符合行业标准封装。经过优化的栅极驱动器选项使设计师能够灵活地选择超...
List of Schools/Colleges IISER Campus List As of now, there are 7 IISERs established. The table given below has the list of 7 IISERs along with the year of establishment and NIRF Ranking. NameYear of EstablishmentNIRF Ranking IISER Kolkata 2006 25 IISER Pune 2006 32 IISER Mohali 2007 55...
List of Schools/Colleges IISER Campus List As of now, there are 7 IISERs established. The table given below has the list of 7 IISERs along with the year of establishment and NIRF Ranking. NameYear of EstablishmentNIRF Ranking IISER Kolkata 2006 25 IISER Pune 2006 32 IISER Mohali 2007 55...
新しいPQFN 8x6パッケージは、最大電流650 Aに最適化された高性能、 高電力密度、クリップベースのパッケージです。パッケージサイズは、TOLLパッケージに比べて50%以上小型化されているうえに、高さが50%削減されているため、全体面積は70%以上の削減となり、コンパクトなパッケージを実現...
英飞凌全新 200 V MOSFET 系列采用最新的 OptiMOS™ 6 MOSFET 沟槽技术,可实现高功率密度、效率和耐用性。 与之前的技术相比,OptiMOS™ 6 具有显着的性能优势: 低传导损耗 低开关损耗 改善EMI 需要更少的并联 并联时更好的电流共享 符合RoHS 标准,无铅 ...
使用底部散热解决方案(如 SuperSO8、PQFN 5x6)时,MOSFET 产生的大部分热量会传递到 PCB,由于其热阻大,因此 PCB 温度会升高。而双面散热解决方案增加了另一条散热路径(底部通过 PCB 散热,顶部通过外露铜夹片和散热片散热),以消散 MOSFET 芯片中产生的热量。
英飞凌的OptiMOS™ 6 120 V功率MOSFET系列适用于高频和低频的硬开关和软开关应用,提供正常和逻辑电平两种类型。它可广泛应用于工业电源、太阳能、电源充电器、低压驱动器和电动工具等领域。 特点 业界在120 V中最低的RDS(on) 在各种应用的开关和传导损耗之间取得最佳平衡 ...