large-signal BJT modelsbipolar transistorbilateral translationsmall-signal equivalent circuitslarge-signal equivalent circuitsLarge-signal implementation of non-quasistatic (NQS) effects in bipolar transistors is reviewed. An approach strategy is proposed that allows bilateral translation between small- and ...
1)GP large-signal modelGP大信号模型 英文短句/例句 1.Research of DC Parameter-Extraction on InP-Based HBT GP Large-Signal ModelInP基HBT GP大信号模型直流参数提取的研究 2.Personal Credit Scoring Model of Non-linear Combining Forecast Based on GP;基于GP的个人信用评估非线性组合预测模型 3.Study on...
3) large-signal model 大信号模型 1. Using typical data of the device,large-signal model was developed by ICCAP and a two-stage GaN MMIC was simulation by ADS. 利用ICCAP软件建立器件大信号模型,利用ADS软件仿真优化了双级GaNMMIC,研制出具有通孔结构的GaN MMIC芯片,连续波测试显示,频率为9。 更...
Very large-scale integrated circuit (VLSI) arithmetic units are essential for the operations of the data paths and/or the addressing units ofmicroprocessors,digital signal processors(DSPs), as well as data-processing application-specificintegrated circuits(ASICs) and programmable integrated circuits. Thei...
Vanpé C et al (2007) Antler size provides an honest signal of male phenotypic quality in roe deer. Am Nat 169:481–493 Article PubMed Google Scholar von Hardenberg A, Bassano B, del Pilar Zumel Arrance M, Bogliani G (2004) Horn growth but not asymmetry heralds the onset of senescen...
Map showing Lookout Point Reservoir, locations of two boat launches in the reservoir, Lookout Point Dam, and Dexter Reservoir, Middle Fork Willamette River, Oregon. Inset shows the location of Lookout Point Reservoir in Oregon and the filled circle located near the Signal Point Boat Ramp is the...
A complete electrical static-dynamic temperature-dependent conventional BJT Gummel-Poon Model was revised and adopted to account for HBT-specific device physics. The new large-signal model for HBTs was incorporated into the commercial RF circuit simulator. This new model was verified against large-...
Large signal models for AlGaAs/GaAs and GalnP/GaAs Heterojunction Bipolar Transistor devices have been generated using two different techniques which allows the generation of simple models for CAD application. The first technique uses the standard SPICE BJT Gummel-Poon model, where the model is ...
The proposed model is unified, i.e. it predicts the DC, small and large signal performance of the device. It has been validated for InGaP/GaAs HBT, Si-BJT and SiGe HBT devices.; The design of power amplifiers in SiGe HBT technology is investigated. A 2.4 GHz high-efficiency SiGe HBT-...
The large signal model was modified with the addition of a parasitic BJT to simulate the kink effect and determine its impact on large signal performance and ramifications to the higher level circuit. To perform these studies, we have developed a parameter extraction software package which can be...