商标名称 KH 国际分类 第01类-化学原料 商标状态 商标续展 申请/注册号 1902716 申请日期 2001-05-30 申请人名称(中文) 江门市科恒实业股份有限公司 申请人名称(英文) - 申请人地址(中文) 广东省江门市江海区滘头滘兴南路22号 申请人地址(英文) - 初审公告期号 - 初审公告日期 2002-06-21 注册公告期号 ...
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摘要: 欣兴电子启动新厂建设计划,预计增资转投资大陆江苏省昆山欣兴同泰科技4,100万美元(约新台币13亿元),初期就占今年大陆资本支出逾五成.昆山欣兴同泰生产软性印刷电路板,实收资本额约5,132万美元,这次增资占目前股本近八成.关键词:昆山 资本支出 印刷电路板 江苏省 大陆 ...
Identifying feature requests and bug reports in user comments holds great potential for development teams. However, automated mining of RE-related information from social media and app stores is challenging since (1) about 70% of user comments contain noisy, irrelevant information, (2) the amount ...
Toilet unit to the water flush 来自 掌桥科研 喜欢 0 阅读量: 10 申请(专利)号: FR19650033520 申请日期: 1965-10-01 公开/公告号: FR1449196A 公开/公告日期: 1966-08-12 发明人:KT Thaddeus,KT Thaddeus 收藏 引用 批量引用 报错 分享 全部来源 求助全文 掌桥科研 0...
Tephra layers embedded in marine sediments can be significant in controlling submarine landslide dynamics and seafloor morphology, but their preconditioning effects on slope failure remain uncertain. Here, we study the morphology and preconditioning factors of submarine landslides from a volcanically active ...
Investigation of O-3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors Liu, Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors, Phys. Status Solidi A (2016)... Yao,Yang,Fan,.....