The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V-and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit(30 n_0) and Upit(15 n_0) ...
In dark, the electron concentration at the bottom of V-pit (30 n 0 ) and Upit (15 n 0 ) are higher than that at planar surface ( n 0 ). Under UV light, for V-pit, the electron concentration at the cone bottom (4.93脳10 11 n 0 ) is lower than that at the surrounding ...