Journal of Semiconductors杂志简介 《Journal of Semiconductors》于1980年创办,全刊信息多却有条有理,坚持打造交流思想和经验共享的主流平台,国内刊号为:11-5781/TN,创刊多年来受到许多读者的支持和喜爱。 《Journal of Semiconductors》是国内最早的半导体领域学术期刊之一,旨在推动半导体科技和应用的研究,为学术界和工...
《The Journal of Semiconductors》published jointly by the Chinese Institute of Electronics and the Institute of Semiconductors, a branch of the Chinese Academy of Sciences, covers the latest achievements and developments in the field of semiconductors and related science and technology. 《The Journal of...
精华评论 tilmix 没人回复? tilmix 大家回复啊,谢谢, wellyy2005 不熟悉,帮顶顶 howgoods 2012年就已经被 SCI踢出了 猜你喜欢板块导航 网络生活 资源共享 化学化工 专业学科 科研生活 生物医药 材料 计算模拟 学术交流 出国留学 注册执考 24小时热帖 换一批 政府工作报告首次定调:...
不是 Journal of Materials Science Research is a double-blind peer-reviewed international journal dedicated to promoting scholarly exchange among teachers and researchers in the field of materials science. The journal is published quarterly in both print and online versions by the Canadian Ce...
《Journal of Systems Science and Systems Engineering》杂志创办于1992,是中国科学技术协会主管的重点学术期刊,SCI期刊,影响因子0.82,现被CSCD 中国科学引文数据库来源期刊(含扩展版)等权威机构收录,Journal of Systems Science and Systems Engineering杂志社介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluatin...
Journal of Harbin Institute of Technology杂志简介 《Journal of Harbin Institute of Technology》于1994年创办,全刊信息多却有条有理,坚持打造交流思想和经验共享的主流平台,国内刊号为:23-1378/T,创刊多年来受到许多读者的支持和喜爱。 《Journal of Harbin Institute of Technology》以发布重要的科研成果、推动学...
Journal of Meteorological Research杂志CSCD期刊统计源期刊SCI期刊 Journal of Meteorological Research 主管单位:中国科协 主办单位:中国气象学会 全年订价:暂无 国际刊号:2095-6037 国内刊号:11-2277/P 创刊时间:1987年 出版地区:北京 发行周期:双月刊 审稿时间:1-3个月 ...
and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications...
Antimonide semiconductors; Ni-GaSb; metal source/drain (S/D); p-channel MOSFET; 50.Novel Ion Bombardment Technique for Doping Limited Cu Source in ${rm SiO}_{x}$-Based Nonvolatile Switching Layer 机译:基于$ {rm SiO} _ {x} $的非易失性开关层中掺杂有限Cu源的新型离子轰击技术 作者:Liu ...