During this one-hour webinar recording, we introduce the STGAP family, our lineup of isolated MOSFET and IGBT gate drivers providing galvanic isolation between the input section and the transistors. Galvanic isolation is attained using a high-voltage, on-chip, micro transformer that ensures commands...
Figure 4. RC circuit model for a gate driver with MOSFET output stage and power device as a capacitor. RDS(ON) also directly affects power dissipation internal to the driver. For a specific drive current, the lower value of RDS(ON) allows higher REXT to be used. As power dissipation ...
Gate driver provides isolated control to MOSFET without power supplyIsmini Scouras
In recent years, 3-phase inverters in industrial equipment have become important to achieving a low-carbon society. This is the gate drive circuit with various protection functions which can safely drive the power module used for the 3-phase inverter. Design tips on each portion of the circuit,...
Design of gate driver circuit using discrete devices for SiC MOSFET power module SiC MOSFET power modules can help to increase the feasibility of high power density, high temperature converters. At the same time, the demand for reliable... HX Wang,J Dong - 《Advanced Technology of Electrical ...
JI Level Shift High Voltage Gate Driver ICs for IGBTs and MOSFETs The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic ...
isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows: • The circuit board has been extended so that now 2 watt as well as...
20. An electronic circuit, comprising: a normally-on semiconductor device having a non-isolated input; and a gate drive circuitry for operating the normally-on semiconductor device at a power greater than a rated power by imposing one of a positive or a negative current on a gate of the sem...
An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications Masayoshi YAMAMOTO,Shinya SHIRAI,Senanayake THILAK,... - 《Ieice Transactions on Fundamentals...
H Takayama,T Okuda,T Hikihara - 《International Journal of Circuit Theory & Applications》 被引量: 0发表: 0年 Design, performance evaluation, fabrication and testing of a SiC MOSFET gate driver Silicon Carbide (SiC) is a compound semiconductor has ten times the dielectric breakdown field strengt...