Power MOSFET and IGBT gate drives often face isolation and high voltage constraints. The gate drive described in this paper uses a Printed Circuit Board based transformer in combination with the memory effect of the Power MOSFET input capacitance to achieve the isolation.by J.M. Bourgeois...
Figure 4. RC circuit model for a gate driver with MOSFET output stage and power device as a capacitor. RDS(ON) also directly affects power dissipation internal to the driver. For a specific drive current, the lower value of RDS(ON) allows higher REXT to be used. As power dissipation ...
Stable on and off drive driving voltages that are ... ER Motto - 《Power Electronics Technology》 被引量: 0发表: 2010年 Design of gate driver circuit using discrete devices for SiC MOSFET power module SiC MOSFET power modules can help to increase the feasibility of high power density, high...
Gate drive design compatibility of 600V and 1200V ICs reduces strongly the design time as the same basic circuit design and layout are re-used by just substituting the equivalent ICs. Read more IR Gate Drivers for low voltage applications We provide a comprehensive portfolio of 200 V level ...
In recent years, 3-phase inverters in industrial equipment have become important to achieving a low-carbon society. This is the gate drive circuit with various protection functions which can safely drive the power module used for the 3-phase inverter. ...
High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules David W. Berning,Tam H. Duong,Jose M. Ortiz-Rod...,... - 2008 - 被引量: 23 An Evaluation of a New Type of High Efficiency Hybrid Ga...
TheF3 family(1ED332x), 8.5 A single channel isolated drivers in DSO-16. They incorporate protection features, such as precise DESAT, soft-off and active Miller Clamp. These products are an excellent solution forSiC MOSFETshort-circuit protection. ...
Besides, the gate drive loss is reduced for over 50% compared to conventional voltage source driver. 展开 关键词: Resonant gate driver level shift circuit gate drive loss SiC power MOSFET 会议名称: 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) ...
Power Electronics News examines a SiC MOSFET transformer-based isolated gate driver, providing a schematic and experimental results overview.
Short circuit protection for parallel connected devices A power semiconductor circuit provides a simple gate drive for switch components for the use in parallel-connected half-bridges, taking into consideration a gate voltage limitation to achieve short-circuit resistance. The circuit consis... P Mouri...