萨科微半导体推出的中压MOS管IRF540NS作为一款性能卓越的N沟道场效应管,漏源电压达到100V,连续漏极电流为33A,具有低导通电阻和低阈值电压等特性,使其成为通信系统中电源管理、驱动控制和能量
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. ...
Affected by the working principle of MOSFET, this electronic building block can only be used to control DC circuits, such as DC LED screens, etc., and is not suitable for the control of AC circuits. The MOSFET switch can be used to control a 100V/33A DC circuit under extreme conditions...
IRG4PC50UPBF IR 10+ SMD 绝缘栅双极晶体管IGBT的速度超快速INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT IRF6620TRPBF IR 10+ SMD A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as ac热门...