功能描述HIGHANDLOWSIDEDRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible ...
328Kb/18PHIGH AND LOW SIDE DRIVER More results 国际整流器(IR)是一家美国公司,专门从事电力管理和电力控制半导体的设计和制造。 该公司成立于1947年,总部位于加利福尼亚州的El Segundo。 IR提供了广泛的产品,包括电力管理IC,Power MOSFET,IGBT和其他电力控制产品。
IR2110_datasheet
HIGH AND LOW SIDE DRIVER IR2110 Datasheet PDF Laser Components Laser Diode IR2110 Datasheet PDF Vicor DC-DC Regulated Power Supply Module, 3 Output, IR2110PBF Datasheet PDF Infineon MOSFET DRVR 500V 2.5A 2Out Hi/Lo Side Non-Inv 14Pin PDIP ...
IR2110L4SCB Infineon datasheet PDF, 14 pages, view IR2110L4SCB Specifications online, MOSFET DRVR 400V 2A 2Out Hi/Lo Side Non-Inv 14Pin MO-036AB.
drivercross-conduction.Propagationdelaysarematchedtosimplifyuseinhighfrequencyapplications.The floatingchannelcanbeusedtodriveanN-channelpowerMOSFETorinthehighsideconfigurationwhich operatesupto500or600volts. TypicalConnection (RefertoLeadAssignmentsforcorrectponfiguration).This/Thesediagram(s)showelectrical ...
接口集成电路类型: HALF BRIDGE BASED MOSFET DRIVER JESD-30 代码: R-PDIP-T14 JESD-609代码: e0 长度: 18.54 mm 功能数量: 1 端子数量: 14 最高工作温度: 85 °C 最低工作温度: -40 °C 标称输出峰值电流: 2 A 封装主体材料: PLASTIC/EPOXY 封装代码: DIP 封装等效代码: DIP14,.3 封装...
DatasheetDescriptionBuy Now Element14IR2110PBF INFINEON IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-14; Driver Configuration:High Side and Low Side; Peak Output C... IR2110SPBF INTERNATIONAL RECTIFIER MOSFET DRIVER, HIGH/LOW-SIDE, SOIC16; Dr; MOSFET DRIVER, HIGH/LOW-SIDE, SOIC16; Driver Configurat...
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-CQCC-N16 JESD-609代码:e0长度:8.955 mm 功能数量:1端子数量:16 标称输出峰值电流:2 A封装主体材料:CERAMIC, METAL-SEALED COFIRED 封装代码:QCCN封装形状:RECTANGULAR 封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED ...
标志 功能描述 HIGH AND LOW SIDE DRIVER IR2110STRPBF 数据表 (HTML) - International RectifierIR2110STRPBF 产品详情DescriptionThe IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune...