G. A.Journal of the Electrochemical SocietyG.A. Antypas, Liquid-phase epitaxy of InxGa12xAs, J. Electrochem. Soc. 117 (1970) 1393±1397.Antypas G.A. Liquid-phase epitaxy of InxGa1xAs. J. Electrochem. Soc., 117(11), 13931397 (1970a)....
InxGa1-xAs高性能全固态数字化微光器件
以上技术优势,InxGa_As器件成为一种新型的高性能全固态数字化微光器件。InxGal_xAS器件与传统的微 光器件在光电转换原理以及器件制备方面存在不同,决定了两者在性能上存在的差异。文中对此进行了对 比分析,分析结果体现了InxGa_gAs全固态数字化微光器件的技术优势和特点,以及InxGa-As全固态数字 ...
InP/InxGa1一xAs异质结构中Zn元素的扩散机制 李永富。,唐恒敬 ,李 淘 一,朱耀明 一,汪 洋。, 李天信。,缪国庆,李 雪 ,龚海梅。 殷 豪。一, (1.中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083; 2.中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083; ...
利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/InxGa1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有InxGa1-xAs组分渐变缓冲段的InAs/InxGa1-xAs/GaAs 三段式纳米...
1. A temperature gradient of 40–60°C/cm was achieved by using a cooling plate. A large temperature gradient is necessary to prevent constitutional supercooling in the case Constitutional supercooling The constitutional supercooling is a serious problem in the growth of InxGa1−xAs crystals, ...
1. Biexcitons in InxGa1-xAs/GaAs quantum wells subject to high magnetic fields - art. no. 153312 [J] . Baars T., Gorbunov AA., Forchel A., Physical Review, B. Condensed Matter . 2001,第15期 机译:受强磁场作用的InxGa1-xAs / GaAs量子阱中的双激子-艺术。没有。 153312 2. ...
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在InAs／InxGa1-xAs核壳量子点中电子的能态研究
Normalized reflection spectra in InxGa1-xAs/GaAs strained quantum wells: Structure and electronic propertiesdeposition processclusterszincA systematic study of GaAs/In x Ga1- x As single quantum wells is performed in two sets of samples with different alloy concentrations ( x = 9% and 18.5%) ...