The full name of FinFET is Fin Field-Effect Transistor. It is a new complementary metal oxide semiconductor transistor. The FinFET name is based on th...
BCT uses two thyristors ( SCR ) in an anti-parallel configuration in a single device. It has two separate gate terminals one for each thyristor. One of the gate terminals turns on the current in the forward direction and the other gate terminal turns on the current in the reverse direction...
We read every piece of feedback, and take your input very seriously. Include my email address so I can be contacted Cancel Submit feedback Saved searches Use saved searches to filter your results more quickly Cancel Create saved search Sign in Sign up...
2D materials have highly interesting properties. This article introduces some popular 2D materials and the methods of obtaining them, and explains why they differ from bulk materials.
We read every piece of feedback, and take your input very seriously. Include my email address so I can be contacted Cancel Submit feedback Saved searches Use saved searches to filter your results more quickly Cancel Create saved search Sign in ...
Xilinxis a leading vendor of field programmable gate arrays (FPGAs), complex programmable logic devices (CPLDs), and adaptive compute acceleration platforms (ACAPs). Founded in 1984, Xilinx invented theFPGAproduct category and continues to be the market leader after over 30 years, accounting for...
Applications can have customized functions in Field Programmable Gate Arrays (FPGAs) and queue work requests directly in shared memory queues to the FPGA. Applications can also have customized functions by using the same effective addresses (pointers) they use for any threads running on a host ...
(prefix) GaAsFET gallium arsenide FET GTO gate turn-off thyristor H Henry Hz Hertz IC integrated circuit IGBT insulated gate bipolar transistor JFET junction FET k kilo = 103 (prefix) LDR light-dependent resistor LED light-emitting diode LSI large-scale integration circuit LSB least significant ...
Verheyen, P., Collaert, N., Rooyackers, R., et al.: 25% Drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions. In: Symposium on VLSI Technology, pp. 194-195 (2005)...
The most visible part of the GSM cell is the base station and its antenna tower. It's common for several cells to be sectored around a common antenna tower. The tower will have several directional antennas, each covering a particular area. This co-location of several antennas is so...