1.The intrinsic carrier concentration reduces when decreasing the v / iii ratio . the high quality of in0 . 53gao . 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs . when the thickness of the buffer layer between the inp substrate...
intrinsic carrier concentration 本质载子浓缩；本征载流子浓度 很高兴第一时间为您解答，祝学习进步如有问题请及时追问，谢谢~~O(∩_∩)O 词典结果：intrinsic carrier concentration[英][inˈtrinsik ˈkæriə ˌkɔnsənˈtreiʃən][美][...
Intrinsic carrier concentration and effective masses in InAs1-xSbx. Rogalski A,Jó?wikowski K. Infrared Physics . 1989A. Rogalski, K. Jzwikowski, Infrared Phys. 29 , 35 (1989) ADSRogalski A. and Joźwikowski K., "Intrinsic carrier concentration and effective masses in InAs1-xSbx", ...
Table 1. The fitting coefficient for the intrinsic carrier concentration simulation versus temperature and Sb molar composition for the bowing parameters given by Eqs. (4) and (5). Coefficients to Eq. (4)Coefficients to Eq. (5) a = 3.4248237 a = 3.4641769 b = – 7.4269295 b = – 6.68505...
intrinsic carrier concentration英[inˈtrinsik ˈkæriə ˌkɔnsənˈtreiʃən]美[ɪnˈtrɪnzɪk ˈkæriɚ ˌkɑnsənˈtreʃən][电] 本质亮度例句与用法1. The intrinsic carrier concentration reduces when decreasing the v / iii ratio . the high quality...
intrinsic concentration本征浓度 intrinsic carrier本征载流子 carrier concentration载流子浓度 free carrier concentration自由载流子浓度 concentration on注意力集中于 for the carrier交承运人 on carrier陆地承运人 intrinsic admittance内在导纳,内禀导纳,固有导纳
The intrinsic carrier concentration ni in silicon at an absolute temperature T can be approximated by where A1 = 3.1×1016 K-3/2·cm-3 and A2 = 7000 K. Use the calculator below to see the effects of changing the temperature and/or the parameters on the intrinsic carrier concentration. ...
intrinsic carrier concentration 英文intrinsic carrier concentration 中文【电】 本质亮度
必应词典为您提供Intrinsic-carrier-concentration的释义,网络释义: 本质载子浓度;本征载流子浓度;本质载体浓度;
To solve the problem, we need to find the concentration of holes (p) in the doped semiconductor using the intrinsic carrier concentration (n_i) and the doping concentration (N_D). 1. Identify the given values: - Intrinsic carrier concentration, ni=1.41×1016m−3 - Doping concentration ...