The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronic applications, since it's not limited by the elemental spin-orbit couplings. In this work we demonstrate REE at Pt/ferroelectric...
Interfacial Rashba-type spin-orbit coupling is an attractive effect to provide spin-orbit torques without the presence of heavy metals. In this work, we report the experimental observation of the Rashba-Edelstein magnetoresistance in the Cr/YIG heterostructure, which can indicate the presence of the...
that utilizes the interfacial-MSHE at the junction of the FGT/MoTe2vdW heterostructure and the inverse spin Hall effect in the MoTe2. The memtransformer, shown in Fig.4a, operates by using voltage signal as both input (\({V}^{{in}}\)) and output (\({V}^{{out}}\)). When the ...
In this work we report a large USMR at room temperature by introducing a Pt interfacial layer in FeNi/Pt/Bi2Se3system. The interfacial Pt layer preserves the topological surface states (TSS) of Bi2Se3and forms additional Rashba surface states29,30, thereby increasing the efficiency of spin cu...
Interfacial Rashba-type spin-orbit coupling is an attractive effect to provide spin-orbit torques without the presence of heavy metals. In this work, we report the experimental observation of the Rashba-Edelstein magnetoresistance in the Cr/YIG heterostructure, which can indicate the presence of the...