Alexe, "Interface trap density in amorphous La 2Hf 2O 7/SiO 2 high-k gate stacks on Si," Applied Physics A: Materials Science and Processing, vol. 80, no. 2, pp. 253-257, 2005.B. Mereu,A. Dimoulas,G. Vellianitis,G. Apostolopoulos,R. Scholz,M. Alexe.Interface trap density ...
We compare the effect of hydrogen, nitrogen, and phosphorus passivation on total near interface trap density and mobility of 4H(0001)-SiC/SiO_2 structure. The results show that nitrogen and phosphorus passivation decrease total near interface trap density by pushing the energy levels of interface ...
Thistechni uecanbeappliedtovirginsamplesandthosesubjectedtohotcarrierstress,andthelatterareknoWntocausetheinterfacedamageinthedrainregionandthechannelregion.Thegenerationofinterfacetrapsdensityinthechannelregionandinthedrainregioncanbeclearlydistinguishedbyusingthistechni ue.K yw hot-carrierstress;LDD;ultra-thingate...
In this paper, a modified charge pumping (CP) technique is proposed to determine the lateral distribution of the interface state density (Nit) near the dra... W Sun,S Hyungsoon - 《Journal Korean Physical Society》 被引量: 2发表: 2002年 Hot carrier and radiation effects in metal-oxide-se...
Since the early stages of the Si-SiO2 interface electrical characterization, the interface trap density has been expressed in eV−1· m−2. Indeed, because of the mismatch between the Si and SiO2 lattices, these traps are expected to be located at or very near the interface. However, ...
High temperature (>1200℃) oxidation has been carried out to reduce the interface trap density and the residual carbon at MOS interface. The interface trap density Nit (equal to the integral of Dit) and the residual carbon of the oxide thermally grown at ...
Interface Trap DensityCharge Pumping MethodHeat Spreading LayerWe analyze the interface trap states generated by the self-heating effect in flexible single-crystalline Si nanomembrane (sc-Si NM) transistors. Despite the excellent device performance (Subthreshold swing: ~61 mV/dec, Ion/off: ~109, ...
Concurrently, the lateral distribution of interface trap density (Nit) and bulk trapped charge density (Not) with stress time has been extracted along the 70nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100nm short channels....
The quantitative interface trap density (Nit) was obtained using a 3-terminal charge pumping method; results showed that Nitdecreased as the gate oxide thickness increased. However, it was observed that the threshold voltage (Vth) shift during negative bias temperature stress is worse in the ...
A semiconductor/dielectric interface having reduced interface trap density and a method of manufacturing the interface are disclosed. In an exemplary embodiment, the method of forming a semiconductor device includes receiving a substrate and forming a termination layer on a top surface of the substrate...