网络释义 1. 表面陷阱电荷密度 ...ced MOS charge analysis)、表面陷阱电荷密度(interface trap density)、介电常数(dielectric constant)和TVS分析(Tri… china.makepolo.com|基于3个网页 2. 界面陷阱密度 (2)具有较高的界面陷阱密度(Interface Trap Density)—由於大部 ...
mobilityHall effect4H-SiCMOSFEThigh-fieldlow-fieldcoulombinterface trap densitysurface roughnessIn this work, we investigate the impact of Al-implantation into... C Strenger,V Uhnevionak,V Mortet,... - Silicon Carbide & Related Materials 被引量: 3发表: 2014年 加载更多来源...
We compare the effect of hydrogen, nitrogen, and phosphorus passivation on total near interface trap density and mobility of 4H(0001)-SiC/SiO_2 structure. The results show that nitrogen and phosphorus passivation decrease total near interface trap density by pushing the energy levels of interface ...
High performance devices need a high quality interface between metal/semiconductor, semiconductor/semiconductor or semiconductor/insulator. In this work, we report three different methods to obtain the interface trap density (<italic>D
50.A dynamical model for the Utricularia trap 机译:乌头虫陷阱的动力学模型 作者:Coraline Llorens;Médéric Argentina;Yann Bouret;Philippe Marmottant;Olivier Vincent 期刊名称:《Journal of the Royal Society Interface》 | 2012年第76期 关键词: bladderwort carnivorous plant fast motion excitable dynamic...
Memories32K to 60K dual voltage High Density Flash (HDFlash) or ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash devices1K to 2K RAMHDFlash endurance: 100 cycles, data retention: 20 years at 55 oC Interrupt ManagementNested interrupt con...
We demonstrate an accurate measurement of the interface trap density and the stress-induced dielectric charge density in Si/high-/spl kappa/ gate dielectric stacks of metal-oxide-semiconductor field-effect transistors (MOSFETs) using the direct-current current-voltage (DCIV) technique. The capture cr...
High field electrical stress effects on the mid-gap interface trap density (Dit0) and geometric mean capture cross sections (σ0) in n-MOSFETs have been studied using the pulsed interface probing method. The results show that the PIP technique is sensitive to changes in mid-gap trap cross se...
A method for estimating near-interface oxide trap density in silicon carbide metal-oxide-semiconductor (MOS) capacitors by transient capacitance measurements was investigated. The fitting of the transient capacitance characteristics measured at room and low temperatures to a simple model describing the de...
2) slow trap desity 慢界面陷阱密度3) critical trap density 临界陷阱密度Nbd 1. The calculated critical trap density N bd by total charge to breakdown Q bd and ΔV bd is valuable for quantitative evaluation of the reliability of thin gate dielectric film. 此外由Qbd和ΔVbd能够较合理地...