This invention is directed to incorporate a current detection function in an insulated-gate bipolar transistor (IGBT) device. To this end, the IGBT according to the present invention constitutes an impurity diffusion region separately from a unit cell region on the surface of the device so that ...
An N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate (1, 30, 40), a drift layer (2), a collector region (4), a channel layer (6), an emitter region (7), a gate insulation film (10), a gate electrode (11), a collector electrode (12), an ...
MULTI-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR PROBLEM TO BE SOLVED: To obtain a multi-channel IGBT, which can be further improved its on-state current density and latch-up breakdown strength. ;SOLUTION: N+ impurity regions 9a to 9c, P+ impurity regions 10a and 10b and gate electrode... ...
An improved insulated-gate bipolar transistor (IGBT) with a trench gate structure that demonstrates a low forward voltage drop of 1.2 V at a forward conduction current density of 200 A/cm/sup 2/ is described. This device structure was fabricated using a self-aligned process that permits closely...
FIG. 25 is a longitudinal sectional view schematically showing the main portion of an n-channel type insulated gate bipolar transistor. The main portion is structured of a p+type drain layer 1, n-type drain layer 2, gate oxide film 3, gate electrode 4, p type base layer 5, n+type sou...
x一ng}ing丈}guon绝缘栅双极型晶体管(insulatedgate biPolartransistor,IG召T)一种场控自关断的电力电子器件,又称绝缘门极双极型晶体管。此种晶体管在80年代迅速发展起来。IGBT的等效电路、图形符号如图(a)所示,图(b)、(c)分别为其转移特性和输出特性。IGBT的输人驱动级为N沟道增强型绝缘栅场效应晶体管MOSFET,...
PROBLEM TO BE SOLVED: To provide an insulated-gate bipolar transistor having high latchup strength. ;SOLUTION: A P-type well region 2 is selectively formed in a surface layer under the main surface on one side of the main surfaces of an N-type semiconductor substrate 1, and an N-type so...
MULTI-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR PROBLEM TO BE SOLVED: To obtain a multi-channel IGBT, which can be further improved its on-state current density and latch-up breakdown strength. ;SOLUTION: N+ impurity regions 9a to 9c, P+ impurity regions 10a and 10b and gate electrode... ...
A band-to-band tunneling injection insulated-gate bipolar transistor (IGBT) featuring a tunnel junction as the collector p-n junction is proposed. The tunn... H Jiang,J Wei,B Zhang,... - 《IEEE Electron Device Letters》 被引量: 23发表: 2012年 Band-to-Band Tunneling Injection Insulated-...
MULTI-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR PROBLEM TO BE SOLVED: To obtain a multi-channel IGBT, which can be further improved its on-state current density and latch-up breakdown strength. ;SOLUTION: N+ impurity regions 9a to 9c, P+ impurity regions 10a and 10b and gate electrode... ...