6)2"InP wafer Orientation:(211)B;(311)B Type/Dopant:N/Te Thickness:400±25mm Polished:SSP/DSP 7)2"InP wafer Orientation:(100)2°off+/-0.1 degree t.n. (110) Type/Dopant:SI/Fe Thickness:500±20mm Polished:SSP 8)2" size InGaAs epitaxial wafer, Substrate: (100) InP substrate Epi La...
1.2 GaAs epi wafer for Wireless Networking 1.3 GaAs epi wafer for LED /IR and LD/PD 2.Epi wafer specs: 2.1 Wafer size: 2”diameter 2.2 GaAs Epi Wafer Structure(from top to bottom): P + GaAs p-GaP p-AlGaInP MQW-AlGaInP n-AlGaInP DBR n-ALGaAs / AlAs Buffer GaAs substrate 3.Chip ...
[30] Soares F M 2010 Monolithically integrated InP wafer-scale 100-channel × 10 GHz AWG and michelson interferometers for 1 THz-bandwidth optical arbitrary waveform generation Opt. Fibre Com (OFC 2010) (San Diego, CA, USA, 21–25 March)paper OThS1 [31] Corzine S W 2010 Large-scale InP...
Materials, networking and laser technology firm Coherent Corp of Saxonburg, PA, USA has established what it says is the world’s first capability for 6-inch indium phosphide (InP) wafer fabrication, in its fabs in Sherman, Texas, and Järfälla, Sweden. The expansion enables the firm to i...
1.2 GaAs epi wafer for Wireless Networking 1.3 GaAs epi wafer for LED /IR and LD/PD 2.Epi wafer specs: 2.1 Wafer size: 2”diameter 2.2 GaAs Epi Wafer Structure(from top to bottom): P + GaAs p-GaP p-AlGaInP MQW-AlGaInP n-AlGaInP DBR n-ALGaAs / AlAs Buffer GaAs substrate 3.Chip ...
As fabs upgrade wafer sizes, they need an MOCVD system that can grow with them. The Lumina has been designed so that the carrier can be changed out to run the next wafer size. A fab could start at 3-inch substrates and eventually move to 8-inch substrates just by changing the carrier...
In this work, we offer a perspective for functional scaling of photonic integrated circuits with actives and passives on InP platforms, in the axes of component miniaturization, areal optimization, and wafer size scaling.Yi WangYuqing Jiao
Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser The present invention relates to the apparatus, system and method for dicing of semiconductor wafers using an ultrafast laser pulse of femtosecond and picosecond pulse widths directly from the ultrafas...
One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined ... L Forbes,JE Geusic,S Akram 被引量: 0发表: 2006年 加载更多来源图书 Group IV Elements, IV-IV and III-V Compounds. Part a - Lat...
Therefore, the dark current performance of linear-mode APDs is dominated by perimeter leakage, and improvements in this device type will require wafer fabrication improvements such as better surface passivation techniques. For SPADs, however, because the perimeter leakage is not multiplied, it does ...