The LNA was fabricated with the ETH Z眉rich 100-nm InP-HEMT MMIC coplanar waveguide process. When operated with a dc power consumption of only 0.6 mW, our LNA delivers a gain of 9.0 $pm$ 0.9 dB from 7 to 11 GHz with a minimum noise figure of 1.4 dB at 9.8 GHz. The excellent ...
Next, we give a detailed description of the InP HEMT LNA MMIC, which is the key component of an image sensor. The LNA for a passive image sensor must have an ultra low‑noise, high‑gain performance because the millimeter‑wave power received by the antenna is extremely weak. Based ...
264 FUJITSU.58, 3, (05,2007) 超高速・超低雑音InP HEMT IC技術 IG 9 ps 0.7 W BPF PA 利得:15±0.1 dB 飽和出力:8 dBm 40 mW SW S/H S/H S/H π/2 データ保持長:3 ns 0.9 W 挿入損失:1.85±0.1 dB ON/OFF比:>35 dB 90 mW 利得:40±1 dB LNA 雑音...
This paper demonstrates the low-power operation of an InP HEMT 60-GHz band low-noise amplifier (LNA) MMIC. The device used here is a commercial 0.1-μm InP HEMT developed for high-speed digital ICs. The fabricated two-stage LNA MMIC, chip size of 0.9mm^2, employs two 50-μm gate-wi...
This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-渭m pseudomorphic InAlAs-InGaAs-InP low noise HEMT technolo... H Wang,R Lai 被引量: 200发表: 1995年 A 155-GHz monolithic low-noise amplifier This paper presents the design, fabrication, and tes...
随着近几年对InP-HEMT的大力开发 和研制,InP-HEMT已成毫米波高端应用的支 柱产品,器件的fT、fmax分别达到340GHz和 600GHz,这代表着三端器件的最高水平。 2 结构 2.1 GaInAs/InAlAs沟道结构 1986年Aksun等人首次报道了制作在 InP衬底上的1μm栅长的HEMT。采用的异质 结结构中InGaAs沟道的In含量为53%,获得 的...
现噪声和增益二者兼顾的LNA电路设 计. ImP基HEMT具有最好的噪声性能, 而且对于与InP基光电器件相匹配的 40Gbit以上的光电通信系统来说InP基 异质器件也是最好的选择.图2为几种主 图1几种FET的高频性能图2GaAs.InP,HEMT的噪声性能 In汀T一一…一一 要的低噪声异质结器件的性能 比较.显然InP基HEMT在毫 米频...
Berenz, "A high performance and low DC power V-band MMIC LNA using 0.1 InGaAs/InAlAs/InP HEMT tech- nology," IEEE Microwave Guided Wave Lett., vol. 3, pp. 447-449, Dec. 1993.R. Lai,etc."A high performance and low dc power V-band MMIC LNA using 0.1 um InGaAs/InAlAs/InP HEMT ...
A 0.1-mum InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 plusmn 0.9 dB and an average noise figure of 1.5 dB with a minimum of...
220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications In this paper, the development of 220-GHz low-noise amplifier (LNA) MMICs for use in high-resolution active and passive millimeter-wave imaging systems is ... A Tessmann - 《IEEE Journal of Solid State Circuits...