The integrated laser shows a wavelength shift of 4.9 nm (or 857 GHz) with a very small heater current of 13 mA.YongkunSinC.PresserN.EBSCO_AspElectronics LettersSin Y, Presser N. Tunable InGaAsP/InP DFB lasers at 1.3 μm integrated with Pt thin film heaters deposited by focused ion beam....
IQE launches industry first 6" InP DFB Laser Platform for AI and data centre applications IQE plc (AIM: IQE, "IQE" or the "Group"),the leading supplier of compound semiconductor wafer products and advanced material solutions to the global semiconductor industry, is pleasedto announce the industr...
[64] Docter B, Pozo J, Beri S, Ermakov I V, Danckaert J, Smit M K and Karouta F 2010 Discretely tunable laser based on filtered feedback for telecommunication applications IEEE Sel. Top. Quantum Electron. 16 1405–12 [65] Heck M J R et al 2009 Monolithic AWG-based discretely tunab...
NeoPhotonics Corp of San Jose, CA, USA (a vertically integrated designer and manufacturer of hybrid photonic integrated optoelectronic modules and subsystems for high-speed communications networks) has launched 1310nm and 1550nm high-power distributed feedback (DFB) lasers and laser arrays for 100G ...
InP laser diode device production:DFB Grating Etch for maximum performance Read & Download > Webinar Etch and Deposition for the High Volume Production of Reliable VCSEL Devices Watch Now > White Paper Front end plasma solutions for InP‑based Lasers and Photodiodes ...
High extinction ratio , NRZ@40Gbps Low drive voltage, Wide band-width Compact size with integrated MZM and DFB Laser APPLICATIONS High-speed short reach communication Wide band PD, ROSA, Receiver stress test SPECIFICATION ParameterUnitMin.Typ.Max. ...
10Gbi t /s 1310 nmDFB激光器调制眼图 参考文献 l M.Si l ver,W.E.B。oi ,S.Mal i k,A.Gal brai th, S.Uppal .et a1.“Wi de Temperat ure( 一20℃一 95℃) Operat i on of an Uncool ed 2.5- Gbi l l s 1300- t amDFBLaser”JEEF noton..techn01.1ett.. ...
DFB lasers with deeply etched vertical grating based on InAs-InP quantum-dash structures 2007, IEEE Photonics Technology Letters Semiconductor quantum dots devices: Recent advances and application prospects 2006, Physica Status Solidi (B) Basic Research Optical gain properties of InAs/InAlGaAs/InP quantu...
High-temperature and high-speed operation of a 1.3-/spl mu/m uncooled InGaAsP-InP DFB laser In this paper, we report the high-temperature uncooled and high-speed directly modulated 1.3μm wavelength AlGaInAs/InP MQW-DFB ridge waveguide laser diode... D Bang,J Shim,J Kang,... 被引量: ...
2.根据权利要求1所述的InP基波分-模分复用少模光通信光子集成发射芯片,其中所述的半导体激光器可以为多个单波长的分布反馈式半导体激光器(DFB-LD)或者是多个波长可调谐的分布式布拉格反射激光器(DBR-LD)。 3.根据权利要求1所述的InP基波分-模分复用少模光通信光子集成发射芯片,其中进行功率分配的多模干涉耦合器,是...