Influence factors analysis shows that the electrostatic induced voltage on the 110 kV line is 12.78 kV, the electromagnetic induced voltage is 12.3 V, the induced current through ground wire is less than 1A when the UHV lines operate at full load. The induced voltage and current decrease while...
2.Emulation and study ofinduced voltageand current for 500 kV double-circuit line on same tower;500 kV同塔双回线路感应电压和电流的仿真与研究 3.Problems ofinduced voltageand current for 500 kV enhanced interconnection systems between Fujian and Zhejiang;500kV福建与浙江加强联网工程系统感应电压和电流...
Multi-circuit on one tower for electric transmission lays high restrictions on the earthing switch.The authors take the 500 kV Zhen-Bao double lines and the 220 kV Dong-Pu double lines on one tower as an example to analyze the induced voltage and current,and calculate the induced voltage and...
According to this reason, the deeper study of influences of different grounding methods towards induced voltage and current is taken into account. The model of one actual 500 k V transmission line of Jinghua, Zhejiang province is set up by EMTP, to study the influence factors of induced ...
This paper presents time-domain characteristics of induced current and voltage on a rocket in the presence of its exhaust plume when an electromagnetic (EM) wave generated by a nearby lightning discharge is incident on it. For the EM-field interaction with the rocket, the finite-difference time...
Gergely, in Analog Electronics: Circuits, Systems and Signal Processing, 2002 2.4.1 The three linear passive components In order to produce a flow of current through any conductor of electricity, a voltage must exist across the two terminals (a difference of electrical potential). Note that the...
powerFactor calculation by using inducedVoltage and exciting current 电机设计中,功率因数可以认为是感应电压和电流的相位差θ。 那么PowerFactor=cos(θ) 废话不多说,上代码: Matlab1代码来源于ilovematlab论坛 fs=100;N=1024;%采样频率和数据点数n=0:N-1;t=n/fs;%时间序列y1=cos(2*pi*15*t+pi/4);...
MR-induced current and voltage measurements To further investigate the performance difference between GC and Pt, we microfabricated open-loop circular dummy microelectrode structures (outer radius = 2.5 cm and inner radius = 1.5 cm) from these two materials, as shown in Fig. 1. The...
Metal/HfO2/Pt stacks (where the metal is Au, Ag, Co, Ni, Cr, or In) are voltage stressed to induce a high-to-low resistive transition. No current compliance is applied during stressing (except the 100 mA limit of the voltage source). As a consequence very high conductance states...
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines 2021, 12, 709. [Google Scholar] [CrossRef] Zagni, N.; Chini, A.; Puglisi, F.; Pavan, P.; Verzellesi, ...