The In2O3-SnO2 binary system between 1473 and 1873 K has been investigated by TEM observations in detail. The intermediate compound has been detected above 1573 K in the composition range from 47.9 to 59.3 mol% SnO2, that crystal structure is long range ordered cubic system similar to In2O...
In2 O32( Sn) and SnO22( F) films2applicatio n to solar2energy co nversio n. Part I : Preparatio n and characterization. Mater Res Bull ,1979 ,14 : 109J.C.Manifacter,L.Szepessy,J.F.Bresse,M.Perotin,R.Stuck.In2O3 (Sn) and SnO2 (F)films application to solar energy conversion...
Highly conductive and transparent thin films of SnO2:F and In2O3:Sn have been prepared using the simple pyrolitic (spray) method. The conditions of preparation are described. Results concerning electronic diffraction, dosimetry by x-ray emission (S.E.M.) and secondary ionic mass spectroscopy ar...
ZnO[1],SnO2[2]andIn203[3】,havebeenwidelyem— ployedastransparentelectrodesforflatpane1displays.solar cellsandorganic1ight.emittingdiodes.TI1isisbecauseof theirgoodopticaltransmittance,highelectricalconductiv— ity,superiorsubstrateadhesion,chemicalinertnessand ...
Active sites on the surface of nanocrystalline semiconductor oxides ZnO and SnO2 and gas sensitivity. Russ. Chem. Bull. 2017, 66, 1728–1764. [CrossRef] 4. Miller, D.R.; Akbar, S.A.; Morris, P.A. Nanoscale metal oxide-based heterojunctions for gas sensing: A review. Sens. Actuators ...