必应词典为您提供in-situ-doping的释义,网络释义: 必须采用就地掺杂技术;掺入;
1)in-situ doping原位掺杂 1.Preparation of CuO-TiO_2 composite nanopowder and in-situ doping in Al_2O_3 microwave dielectric ceramics;CuO-TiO_2复合纳米粉制备及其原位掺杂Al_2O_3微波介质陶瓷 英文短句/例句 1.Growth and Characterization of Rare Earth Metal Doped GaN Films by Electron Cyclotron ...
请教一下大家，光催化中的in-situ doping(原位掺杂）是什么？
(RTCVD) was used to selectively deposit Si0.7Ge0.3on Si using SiH2Cl2, GeH4, and H2. Both ion-implanted andin-situdoped Si0.7Ge0.3were considered as a diffusion source for fabricating ultra-shallow junctions.In-situdoping was achieved with B2H6and PH3forp-typeandn-typedoping, respectively....
and ammonia at the surface of the silicon substrate thereby doping the amorphous silicon in situ. The amorphous silicon layer is then etched so as to overlap slightly with regions that will later correspond to the source and drain regions. Next, a lower oxide layer of an ONO dielectric is de...
This paper presents the first report on in situ antimony doping for growing p-CdTe films using electrodeposition. The verification of p-doping of CdTe during growth was ascertained by means of steady state cathodic polarization under chopped illumination. Proton induced x-ray emission spectroscopy (PI...
The effect of in-situ Pb-doping in MOCVD on the structures and superconductivity of Bi-Sr-Ca-Cu-O films has been studied for the first time. We have obtained the films with die high-Tc single phase by Pb-doping in the high oxygen pressure (≈50 Torr) reg
At high p‐doping levels, the ESR signal intensity decreases and the linewidth increases; we interpret this in terms of metallic characteristics. Following p‐doping, nominally undoped films contain trapped radicals, which are removed on subsequent p‐ or n‐doping. Throughout, g values indicate ...
To further explore the N-doped that influenced CO2RR activity, XANES and FT-EXAFS of Cu/C without the N-doping was plot in Supplementary Fig. 8. The XANES of the Cu/C indicated that the Cu ions were reduced to metallic Cu. The FT-EXAFS data also showed the peak for Cu–Cu in R ...
The two main methods of impurity introduction, ion implantation and in situ doping, have been considered in this study. The effects of the main processing parameters and thermal annealing on the electrical, surface and structural properties have been investigated. The choice of doping technique ...