improvement in the differential amplifiers in integrated mos technology pPERNA ENRICOOLIVIERO ANTONIOCALENDA CIRO
- 《International Journal of Numerical Modelling》 被引量: 0发表: 2024年 High-gain, bulk-driven operational amplifiers for system-on-chip applications An ultra-low voltage rail-to-rail operational transconductance amplifier (OTA) is based on a standard digital 0.18 渭m CMOS process. Techniques ...
The receiver sensitivity is -52 dBm (123 photons per bit), at 220 MBPS ... JL Conner,JL Guggenmos,BD Seery - International Society for Optics and Photonics 被引量: 1发表: 1989年 Design of high compression point Josephson junction travelling wave parametric amplifiers for readout of ...
The proposed RF mixer circuit provides a conversion gain of 15.33 dB and an integrated double-sideband noise figure (DSB-NF) of 16.39 dB while consuming a low power of 1.5mW from a 1 V supply. The circuit also boasts an SFDR of 81.36 dB and IMR2 of 192.1 dB. The ...
improvement in the differential amplifiers in integrated mos technology pANTONIO OLIVIEROENRICO PERNACIRO CALENDA
The approach is used as the optimization core of an EDA tool to size CMOS analog circuits efficiently. In particular, we focus on diminishing the total component area as the objective. At the same time, other specifications, such as dc gain, bandwidth and power dissipation, are treated as ...
(MOSHEMT) using the wet surface treatment technology followed by the deposition of a high-quality Al2O3layer. Compared with hydrochloric acid cleaning, a better surface morphology was achieved after the adoption of the wet surface treatment. Moreover, the imperfect layer of the gate region ...
The design was fabricated in a 0.13 µm complementary metal oxide semiconductor (CMOS) process with a chip area of 750 µm × 1270 µm. At a 2.4 GHz working frequency, the measurement result shows a conversion gain of 36 dB, double side band (DSB) noise figure (NF) of 6.8 dB,...
Figure 6a shows the current gain characteristics of the device for fixed DC parameters at Vds = 12 V and Vgs = −2 V. The optimized 0.8 µm FP structure showed the fT of 6.7 GHz, where the value of the normal T-shaped gate structure was 12.7 GHz. It was seen that thApeplr. e...