Internally generated DFT stepped hysteresis sweep for electrostatic MEMSThe present invention generally relates to a mechanism for testing a MEMS hysteresis. A power management circuit may be coupled to the electrodes that cause the movable plate that is disposed between the electrodes in a MEMS ...
Leveraging this insight, we experimentally demonstrate reducing hysteresis to less than 0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even...
(a) Semi-log plot of the current-voltage sweep defining a transition voltage between the off and on states. (b) The transition voltage is linearly proportional to the ideal metal work function indicating that the transition is tied to the Schottky barrier height. (c) The transition voltage ...
3a, a current switching ratio of 5×106 is achieved in the device within a small voltage window ΔVg of 0.76 V (−0.26 to 0.5 V) in the forward Vg-sweep. Compared with the few-layer device, the bilayer channel exhibits a much steeper slope in the initial turn-on ...
A delayed reduction in the built-in potential could explain why there is a dependence on voltage sweep rate and direction for J–V measurements. Even though there was no direct evidence of ion migration effects, recent works by Xiao and co-workers have provided supportive evidence to this ...
Careful observation of the Id-Vg curves, as well as monitoring the Id-Vg hysteresis and flat band voltage shift as a function of temperature and sweep frequency identifies the dominant mechanism. This methodology is demonstrated using 15-nm thick high glass transition temperature polar polymer-based...
Results from the shear rate sweep experiment revealed that the monomer solution exhibited Newtonian fluid behavior, maintaining a constant viscosity regardless of the shear rate (Fig. S6). This constancy indicated that there was no molecular entanglement within the solution, ensuring excellent stability ...
However, in the nearly 25 years since the discovery of single-molecule magnets(7), hysteresis temperatures have increased from 4 kelvin to only about 14 kelvin(8-10) using a consistent magnetic field sweep rate of about 20 oersted per second, although higher temperatures have been achieved by ...
The software I use is CentOS 7 64-bit ,TSMC 0.18 UM CMOS Mixed Signal RF General Purpose MiM FSG Al 1P6VM 1.8&3.3V ShawnLoganover 1 year ago Dear Restart, As I believe the authors of the paper you reference may have done from their plot, I think you just need to sweep the value...
(b–d) I–V hysteresis of control film increases when increase the negative bias and injected current (solid line, forward sweep; dashed line, reverse sweep). (f–h) I–V hysteresis of hybrid film is suppressed when increasing the negative bias and injected current. Scanning rate is B0.5 ...