Song Limei~+,Li Hua,Du Huan,Xia Yang,Han Zhengsheng,and Hai Chaohe(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China).Investigations of Key Technologies for 100V HVCMOS Process.The Chinese Journal. 2006Song Limei~+,Li Hua,Du Huan,Xia Yang,Han Zhengsheng,and Hai ...
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(College of Electronic Engineer，Xi'an University of Posts and Telecommunications，Xi'an710000，China)Abstract:The design and realization of a H-bridge which is power integrated circuit(Power IC,PIC)and based on the HVCMOS process with low cost,high integration and strong driving performance is ...
High voltage capability is achieved by adding only 2 masks to the baseline 3.3V CMOS. The process modularity enables appropriate customisations to address a wide range of applications with the same platform.S. BachL. AtzeniA. MolfeseA. DundulachiE. CastellanaG. CroceC. Contiero...
Abstract:The design and realization of a H-bridge which is power integrated circuit(Power IC, PIC) and based on the HVCMOS process with low cost, high integration and strong driving performance is introduced. The established metal interconnection evaluation model can judge the H-bridge physical lay...
This work presents the design details of three HVCMOS sensor chips with an overview of the measurement results of ATLASpix1 which is the first large area (1 cm x 2 cm) prototype in 0.18 mu m process.doi:10.1016/j.nima.2018.11.022Prathapan, M....