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Table 2: Addressing Parameter Configuration Refresh count Row address Bank address Column address Page size 4Gb: x4, x8, x16 DDR3L SDRAM Description 1 Gig x 4 128 Meg x 4 x 8 banks 8K 64K (A[15:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 1KB 512 Meg x 8 64 Meg x 8 x 8 banks...
0.0 LPDDR3 SDRAM 5.0 FUNCTIONAL DESCRIPTION LPDDR3-SDRAM is a high-speed synchronous DRAM device internally configured as an 8-Bank memory. This device contains the following number of bits: 8Gb has 8,589,934,592 bits LPDDR3 devices use a double data rate architecture on the Command/Address ...
(ns) 54 55 55 55 Table 2: Addressing Parameter Configuration Refresh count Row address Bank address Column address 512 Meg x 4 64 Meg x 4 x 8 banks 8K A[14:0] (32K) BA[2:0] (8) A[11, 9:0] (2K) 256 Meg x 8 32 Meg x 8 x 8 banks 8K A[14:0] (32K) BA[2:0] (...
8Gb (DDP) X16 X32 CK//CKE CK / / CKE 1:0] CK / / CKE[1:0] DQ [15:0] [31:0] [15:0] [31:0] DQS/DM [1:0] / [1:0] [3:0] / [3:0] [1:0] / [1:0] [3:0] / [3:0] CA CA[9:0] Bank Addr...
It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications. The chip is ...
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any ...
It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications. The chip is ...