What the on-state resistance power of MOSFET is influenced by; Calculation of on-state power losses for constant on resistance; Information on conduction losses for current-dependent on-state resistance.KolarJohannW.ErtlHansZachFranzC.EBSCO_AspIEEE Transactions on Industrial Electronics...
I am a hobbyist, and have assembled a 6 phtodiode circuit. I have used Darlington pair [BC547 BJT NPN] for amplification of current. However, the measuremnts are not steady and stable. Can I add another Darlington pair or do I need to add a capacitor in photodiode circuit? I checke...
With this assessment, an n-channel power MOSFET is employed and a positive voltage, VGS(ON), is supplied from the Gate to the Source terminals of Q1 by the control circuit to switch on the FET. The benefit of employing an n-channel FET is its lower RDS(on) however the contro circuit ...
And then we can measure the Vd-s (Q1), Icharge, and Tc to calculate RΘCA. If the measured RΘCA is lower than what we expect, we should increase the surface area of the drain pin pads or reduce the charge current. Also, we should keep in mind that Tc must not exceed 130°C...