3D NAND is more difficult to make than previously thought. Unlike 2D NAND, which is a planar structure, 3D NAND resembles a vertical skyscraper. A 3D NAND device consists of multiple levels or layers, which are stacked and then connected using tiny vertical channels. Today’s leading-edge 3D...
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The other property is that it's very easy to build an inverter using a NAND gate.[set up NOT gate configuration]So bear with me while I drop a whole bunch of gates into my circuit here.[wire up the two input mux]I'm going to name some nodes just to make it easier. This is...
The stairstep etch is yet another very difficult and new process that must be managed to successfully mass produce 3D NAND. The vias must land precisely on their designated stairstep and not on any others, or the wordlines will be shorted to each other. If the via doesn’t make a solid...
When current reaches the control gate, electrons flow onto the floating gate, creating a net positive charge that interrupts current flow. By applying precise voltages to the transistors, a unique pattern of 1s and 0s emerges. NAND flash comes in two flavors based on how many 1s and 0s ...
There is an interesting difference between the erase mechanism inTCATand that ofBiCS. The TCAT cell uses the same kind of connections as a planar NAND, so electrons are tunneled from the floating gate back into the channel when a negative bias is applied to the control gate and a positive ...
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We use the CMOS chipCD4069B inverter gateform. Or also use NAND gate: CD4011, MC14011B. Then, take the input joint together into the same inverter form. Connect the circuit as the figure below. We just to joint pins with many wires onto the breadboard in the correct position only. ...
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When current reaches the control gate, electrons flow onto the floating gate, creating a net positive charge that interrupts current flow. By applying precise voltages to the transistors, a unique pattern of 1s and 0s emerges. NAND flash comes in two flavors based on how many 1s and 0s ...