hot electron thermal noise/ B2560R Insulated gate field effect transistorsMeasurements are reported on a 2.0 μmeter buried channel MOSFET. Because of the short channel length, the device showed large hot electron effects. The noise reaches a limiting value above a few MHz; this is attributed ...
As a consequence, the interface states may get increased which in turn degrade the channel mobility, modify the threshold voltage, degrade the subthreshold slope, and affect switching characteristics of the MOSFET. Attempts to correct or compensate for the hot electron effect in a MOSFET may ...
Excellent immunity of GIDL to hot-electron stress in reoxidized nitrided gate oxide MOSFET's 来自 国家科技图书文献中心 喜欢 0 阅读量: 63 作者:AB Joshi,DL Kwong 摘要: The authors present an investigation of the enhancement in gate-induced drain leakage (GIDL) caused by hot-electron stress in...
Cyclotron resonance of electron inversion layers in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's) Cyclotron-resonance experiments on inversion-layer electrons in a series of large gate area Si metal-oxide-semiconductor field-effect transistors (MOSFET's... RJ Wagner,TA Kenned...
展开 关键词: Experimental/ Auger effect electron-hole recombination hot carriers MOSFET/ Auger recombination hot carrier degradation nMOSFET forward substrate bias light emission spectrum temperature dependence reliability high temperature operation/ B2560R Insulated gate field effect transistors DOI...
The gate-oxide thickness dependence of the hot-carrier-induced degradation in the buried p-MOSFET is described. The results reveal that the thin gate oxide... S Odanaka,A Hiroki - International Electron Devices Meeting 被引量: 47发表: 1990年 Characterization of the hot-electron-induced degradati...
RELY predicts hot-electron induced MOSFET degradation that occurs over the device lifetime. Using solutions to the Poisson and continuity equations as input, which were calculated before the onset of degradation, RELY efficiently calculates the electron energy distribution function throughout the device....
Hot-carrier degradation study of High Density Plasma (HDP) oxide deposition process in deep-submicron NMOSFETS In this research work, the effect of HDP process on NMOSFET and PMOSFET hot carrier lifetime have been systematically studied and investigated. The ... Y Pei,X Zeng,KF Lo,... -...
We present an Ensemble Monte Carlo (EMC) study of the electron-electron interaction in semiconductors, utilizing the full dielectric function to determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transient dynamic respon...
Theoretical or Mathematical/ electric current equivalent circuits hot carriers MOSFET semiconductor device models/ current degradation modelling hot-electron damaged MOSFETs LDD NMOSFETs analytical model drain current parasitic resistance lightly doped drain/ B2560R Insulated gate field effect transistors B2560...