In this configuration, only the excited spin-up hole can tunnel out of QD2 while only spin-down holes from the sensor can tunnel in. These tunnelling events are detected by thresholding the phase of the reflectometry signal of the sensor to achieve single-shot readout of the spin state. ...
Hole only devices with the structure of FTO/Au/CuSCN/MoO3/Ag were fabricated to determine hole mobility of CuSCN-E and CuSCN-D. To construct the hole only device with the function of blocking the electron injection under bias, firstly, a layer of Au (100 nm) was sputtered on top ...
Hole-only devices composed of a LaCuOSe:Mg/NPB/Al structure showed a low threshold voltage 0.2 V and high-density current drivability of 250 mA cm 2 at 2 V, which is larger by two orders of magnitude than that of ITO/NPB/Al devices. These results demonstrate that LaCuOSe:Mg has great...
Furthermore, we used the space-charge limited current (SCLC) method to evaluate the mobility using a hole-only device with a structure of ITO/PEDOT:PSS/HTL/Ag (Fig. 4b). The mobility (µ) of pristine PDI-2 was found to be ~ 7.56 × 10−8 cm2 V−1·s−1 ...
The underlying Hyperbee backing the drive file structure. drive.core The Hypercore used fordrive.db. drive.id String containing the id (z-base-32 of the public key) identifying this drive. drive.key The public key of the Hypercore backing the drive. ...
A novel device structure incorporating a p-channel MOSFET with a metal/tunnel-oxide/ n-silicon device is proposed as a tool for separating electron and hole tunneling currents in ultra-thin silicon dioxide films. With this structure, the... FL Hsueh,L Faraone,JG Simmons - 《Solid State Elect...
The knowledge of the energy level structure is important in the theoretical aspects as well as for potential device applications [19], [20]. In this particular, the B δ-doped Si QW has been recently investigated from the theoretical [15], [16], [17] and experimental points of view [24...
However, only few studies related to 3D finite element analysis for the thread forming process have been published. Guan et al. [2] studies the stress distribution during a dynamic simulation of the dental implant insertion process. Mathurin et al. [3] determine displacements during the forming ...
Owing to the particle–hole asymmetric band structure, the pseudogaps appeared only near the van Hove critical points under hole doping. In contrast to the calculations, our measurements did not observe the true metallic state (dρ/dT>0) at low temperature. This is probably due to the effect...
Only a negligible amount of defect is created by the irradiation. Also the hole-doped low resistance state of graphene remains robust against external perturbations. This carrier doping is achieved without requiring the bias-gate voltage as is the case for other field effect devices. We make two...