Three new high-K multiquasiparticle intrinsic states, K=(29), K=30, and K=(34), have been assigned in W. The configurations of these states are based on ten, eight, and ten, unpaired nucleons, respectively, and they represent the highest-seniority intrinsic K states observed to date. ...
High-K高介电前驱体主要应用于制造高性能、高可靠性的半导体器件,如动态随机存取存储器(DRAM)和微处理器等。在DRAM中,High-K材料可以作为电容器的介电层,提高电容器的存储容量和稳定性;在微处理器中,High-K材料可以作为栅极氧化物,提高晶体管的开关...
In order to obtain high performance CMOS devices with scaled dimensions, introduction of new technologies into the front-end fabrication process are required and therefore technologies such as strained channel, metal gate, high-k gate dielectrics, thin body SOI, and multi-gate transistor, are propose...
This is done for single layers as well as for bilayers consisting of interfacialSiOxand a high-Kdielectric. In the case of the bilayers, the impact of the interfacial layerSiOxis enormous, reducing the leakage current by an order of magnitude per monolayer. This extreme dependance makes a ...
A field effect transistor (FET) including a high dielectric constant (high-k), threshold voltage (Vt) modifying channel and a gate extension devoid of the high-k and/or Vt modifying material, and a related design structure, are disclosed. In one embodiment, a FET may include a gate having...
There have been many efforts in reducing the operating voltage of thin-film transistors (TFTs) by using dielectric materials with high capacitances, such as high-k inorganic dielectrics, organic/inorganic hybrid dielectrics, and self-assembled nanodielectrics [1]. Aluminum oxide (Al2O3) and zircon...
The high-K calc-alkaline granitoids were emplaced at 275–279Ma into the southern Beishan orogen.Magmas were derived from heterogeneous source with dominated juvenile crust.They were formed in a post-collisional setting and were linked to asthenospheric upwelling.They were in response to the geodyn...
"High-k" stands for high dielectric constant, a measure of how much charge a material can hold. Air is the reference point for this constant and has a "k" of 1.0. Silicon dioxide (the "old-fashioned" gate material) has a "k" of 3.9. "High-k" materials, such as hafnium dioxide ...
This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a ...
2007 saw the introduction of the first high-k/metal gate (HKMG) devices into the marketplace. This marked the return of metal-gate technology on silicon for the first time since polysilicon gates became ubiquitous in the early 1970s. Intel was the first to use high-k/metal gate in its ...