The utility model provides a P-MOSFET driving circuit applied in high voltage, comprising a power input end, a source output end and a gate output end, wherein the power input end is electrically connected with the source output end. The driving circuit further comprises a back-stage ...
drive a high and a low side power MOSFET, a bootstrap circuit to energize the high side driver cell, a high voltage PMOS transistor (HVPMOS) between a voltage source and the bootstrap circuit, wherein the HVPMOS is embedded in an N-isolation layer and is integrated with the dri...
There are several equally important aspects that must be consid- ered, such as the following: ► Gate charge of the power MOSFET being driven ► Bias voltage value used to power the driver ► Maximum switching frequency of operation ► Value of external gate resistance ► Maximum ...
Circuit Diagram Featured Products You might also... Description The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to...
Circuit Diagram Featured Products Recommended for you Description The L6389E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail...
The EiceDRIVER™ 1EDI3038AS is an automotive qualified single channel high voltage gate driver optimized for SiC MOSFET.综述 图表 指标参数 文件 订单 设计支持 支持 The EiceDRIVER™ gate driver 1EDI3038AS is a high voltage SiC MOSFET driver for automotive applications, offe...
Side Driver The NCP5181 is a High Voltage Power MOSFET Driver providing two outputs for direct drive of 2 N−channel power MOSFETs arranged in a half−bridge (or any other high−side + low−side) configuration. It uses the bootstrap technique to insure a proper drive of the High−...
The LTC1255 dual high-side driver allows using low cost N-channel FETs for high-side industrial and automotive switching applications. An internal charge pump boosts the gate drive voltage above the positive rail, fully enhancing an N-channel MOS switch with no external components. Low power oper...
650V 11A High Voltage GC11N65K SJ Mosfet for BMS application Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature rise: lower power consumption, effectively reduce the overall working temperature of the power ...
GD3160 supports implementation of high-voltage HEV/EV traction inverters, and DC/DC converters using silicon IGBTs or SiC MOSFETs. FEATURES The GD3160 is a highly integrated single output IGBT and SiC MOSFET gate driver for automotive electric vehicles (EV) traction motor inverters. • ...