LPCVD high temperature oxide (HTO) deposited at 800掳C-900掳C is investigated for use in oxide-nitride-oxide (ONO) interpoly dielectric stacks. HTO allows for reduced thermal budgets, improved conformal coverage at edge features and more flexibility in scaling the ONO stack compared to thermal ...
Reliable HTO (High Temperature Oxide) dielectrics are provide by a rapid thermal chemical vapor deposition (RTCVD) process in which a low pressure and a high ratio of reactants, e.g., oxygen-containing gas to silane-containing gas, is employed. Specifically, the reliable HTO is formed by ...
totheinterfacebetweenoxidescaleandsubstrate_o81:(2)enhancementofscaleplasticitybymodifyingthestructure;(3)mechanicalkeyingbytheformationofoxidepegs;(4)changeoftheprocessofoxidescalegrowth'''.Howevernoneofthemcanexplainallphenomenaindependentlyandtheeffectmechanismofyttriumonhightemperatureoxidationresistancefordifferent...
www.nature.com/scientificreports OPEN Integration of coal gasification and waste heat recovery from high temperature steel slags: an received: 01 July 2015 accepted: 16 October 2015 Published: 12 November 2015 emerging strategy to emission reduction Yongqi Sun1, Seetharaman Sridhar2, Lili ...
www.nature.com/scientificreports OPEN Li-Assisted Low-Temperature Phase Transitions in Solution- Processed Indium Oxide Films received: 24 November 2015 accepted: 11 April 2016 Published: 28 April 2016 for High-Performance Thin Film Transistor Manh-Cuong Nguyen1, Mi Jang2, Dong-Hwi Lee1, ...
United States Patent US6218315 Note: If you have problems viewing the PDF, please make sure you have the latest version of Adobe Acrobat. Back to full textHome Search Services Contact us © 2004-2024 FreePatentsOnline.com. All rights reserved. Privacy Policy & Terms of Use....
In recent years, our team at LANL has been working on the development of OREATE (Oxide Reduction by Electrochemical Amalgamation and Thermal Extraction). OREATE is a holistic electrochemical approach that involves an initial step wherein the metal oxide is dissolved and chlorinated into an acidic ...
(HV) gate oxide38on the N-wells33and the P-wells36using conventional deposition processes, e.g., chemical vapor deposition (CVD) processes or plasma-enhanced chemical vapor deposition (PECVD) processes or high-temperature oxide (HTO). In embodiments, the HV gate oxide38is utilized as a ...
Erase gate dielectric 19 may be formed of oxide, nitride, or another suitable dielectric(s). A process of forming erase gate dielectric 19 may include high temperature oxidation (HTO), in situ steam generation (ISSG) oxidation, another suitable deposition or growth process(es), any combination ...
5. 6 nm high temperature oxide (HTO) deposition; 6. Active area photo; 7. Dry etch nitride, stop on oxide; 8. Strip resist; 9. 15 nm dry oxidation; and 10. Wet etch nitride. The method according to one embodiment permits the operation of dummy structures with a uniform density. Anot...