We report high power performance of a 10-wavelength DFB laser array using on-chip optical amplification. Average power per wavelength into a single mode fiber is 6.5 dBm and 0.5 dBm under individual and simultaneous operation, respectively.Zah, C.E....
In addition, a four-channel DFB laser array based on SMG was also fabricated on the same wafer, showing good wavelength uniformity. 展开 关键词: High power single longitudinal mode DFB semiconductor laser sampled moiré grating integrated optics devices ...
In support of the emerging silicon photonics ecosystem, NeoPhotonics has introduced a range of high-power, uncooled lasers and laser array sources for both the 1310nm and 1550nm wavelength bands. These lasers support power of 40-60mW over a wide temperature range. One specific 100G data-center...
Separate confinement heterostructure strained single quantum well materials were grown by the technology of metal organic chemical vapor deposition(MOCVD).The peak wavelength of the semiconductor laser(LD) linear array with the materials is 939.5 nm,the full width at half maximum(FWHM) is 2.3 nm,the...
The output wavelength of a semiconductor laser is based on the difference in energy between the valance and conduction bands of the material (bandgap energy). Since the energy of a photon is inversely proportional to its wavelength, this means that a larger bandgap energy will result in a short...
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;SOLUTION: The wavelength of oscillation photosignal of a semiconductor laser is specified not to exceed 1.1 μm. Besides, an active layer 604 made of either GaInP base or AlGaInp base III-IV group semiconductor is provided while a distribution feedback(DFB) structure made of periodical ...
Study of the Multiwavelength DFB Semiconductor Laser Array Based on the Reconstruction-Equivalent-Chirp Technique A detailed theoretical analysis of the lasing wavelength precision of the DFB laser array based on a reconstruction-equivalent-chirp (REC) technique is pre... Yuechun,Shi,Simin,... - 《...
EP05794371994-01-19Coated DFB semiconductor laser for use in analog optical fiber communication system. JP62057259 JPS6257259A1987-03-12 Other References: L.J. Mawst, et al., “High Continuous Wave Output Power INGAAS/INGAASPINGAP Diode Lasers: Effect of Substrate Misorientation,” Applied Physica...
Design of a high power slab-coupled optical waveguide DFB semiconductor laser around 1550 nm In this paper, we designed a Slab Coupled Optical Waveguide (SCOW) DFB semiconductor laser around 1550 nm with increased output optical power and single mo... C Peng,YC Shi,M Li,... 被引量: 0发...