Architecting Non-volatile Memory for High Bandwidth Systems(为高带宽系统架构非易失性存储器) 热度: Inmarsat High Gain Antenna国际海事卫星组织的高增益天线 热度: 毕业设计(论文)-全差分高增益、宽带宽CMOS运算跨导放大器的设计 热度: HighGainBandwidthProduct,recisionFastFET™OpAmpDataSheetAD8067 ...
High gain, large bandwidth, and low noise avalanche photodetectors\n(APDs) are increasingly attractive for use in high-bit-rate optical\ncommunication systems because of the internal gain provided by APDs.\nSilicon avalanche photodetectors are well-known for their large gain\nbandwidth product, low...
Ideal for low-side current measurements, the TSV772 is a dual 20 MHz-bandwidth unity-gain-stable amplifier with a rail-to-rail input stage and slew rate of 13 V/µs.
The effective transimpedance bandwidth-product is 10.3 THz-/spl Omega/ and is 21% higher than the previous record of 8.5 THz-/spl Omega/ for an AlGaAs/GaAs HBT which consumes more than twice the dc power. This work illustrates the high gain-bandwidth and speed performance which InAlAs/InGaAs...
high-gain 英['haɪɡ'eɪn] 美['haɪɡ'eɪn] 释义 高增益 实用场景例句 全部 Many high - gain stations will be deployed on land and ocean bottom. 在陆地和洋底要设置许多高增益的台站. 辞典例句 Features: High gain bandwidth product, small output capacitance, low noise figure....
Thus developing InP-compatible APDs with high gain-bandwidth product (GBP) is important to the overall effort of increasing optical links' data transfer rate. Here we demonstrate a novel InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for ...
INTEGRATED OPTIC MODULATORS WITH HIGH GAIN BANDWID 专利名称：INTEGRATED OPTIC MODULATORS WITH HIGH GAIN BANDWIDTH PRODUCT 发明人：MAHAPATRA, AMARESH,HALLEMEIER,PETER, F.,LI, HAI, QING 申请号：EP99908136 申请日：19990211 公开号：EP1057066A4 公开日：20010509 专利内容由知识产权出版社提供 摘要：The ...
Product Parameters Frequency bandwidth Forward 87-860MHz Reverse (option) 5-65MHz Gain Forward 30dB Reverse (option) 12dB Noise figure Forward ≤10dB Reverse (option) ≤12dB Output level Forward 102dBuV Reverse(option) 110dBuV CTB Forward ≥65dB CSO Forward ...
The combined properties of very low dark current ( $I _{rm dark} (M=10)=17$ nA), low excess noise factor ($f(M=10)=3.5$ ), and high gain $times$ bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 $mu$m....
Gain bandwidth product Si-Ge: Silicon-germanium SACM: Separate absorption charge multiplication AI: Aartificial intelligence IoT: Internet of things WDM: Wavelength division multiplexing MDM: Mode division multiplexing LIDAR: Light detection and ranging ...