与钙钛矿锰氧化物或者常压下HgCr2Se4只在铁磁有序温度附近才表现出庞磁电阻效应不同,高压下的n型HgCr2Se4单晶在较宽的低温磁有序区间都表现出了巨大的磁电阻效应,例如,在4GPa、2K、5T时磁阻甚至高达3×1011%。为了阐明其物理机制,他们对n型HgCr2Se4单晶...
如图1所示,他们首先利用六面砧装置测试了n型HgCr2Se4单晶在0-7GPa压力范围内、0T与8T磁场下的电阻率-温度依赖关系,发现0T下铁磁有序造成电阻率上的绝缘体-金属转变随着压力的升高逐渐向低温移动,同时低温Tmin以下电阻呈现上翘现象并随压力增加而逐渐增强,在3.5 GPa以上样品电阻率变为完全绝缘性。有意思的是,当...
HgCr2Se4 crystal structure, lattice parametersSemiconductorsTernary Compounds, Organic SemiconductorsCaTiO3: crystal structure, lattice parametersdoi:10.1007/10717201_672O. MadelungU. RösslerM. Schulz (ed.)Springer Berlin Heidelberg
The Raman spectrum of the ferromagnetic semiconductor HgCr2Se4 ( T C = 106 K) and its dependence on temperature and incident photon energy is measured. Five Raman-active modes are found at 65, 157, 168, 210, and 237 cm-1 and are assigned to certain ionic vibrations in the spinel unit...
Reflectivity and dynamical conductivity ofn-type HgCr2Se4Optical properties and materialsReflectivity measurements have been done on doped n -type HgCr 2 Se 4 ( n ≈(10 15 ÷10 19 ) cm −3 ), at various temperatures ((4÷300) K) in the infra-red range \\\(\\\left( {ilde v =...
II. HgCr2Se4 majima T, Kambara T, Gondaira K I, Oguchi T.: Self-consistent electronic structures of magnetic semiconductors by a discrete variational Xα calculation... Tamio,Oguchi,Takeshi,... - 《Physical Review B》 被引量: 62发表: 1981年 Self-consistent electronic structures of magnetic...
ChemInform Abstract: PREPARATION OF MERCURY CHROMIUM SELENIDE (HGCR2SE4) AND COPPER CHROMIUM SELENIDE (CUCR2SE4) AND STUDY OF THEIR THERMAL CONDUCTIVITYchromium, CrNo abstract is available for this article.doi:10.1002/chin.197612028N. Z. DZHALILOV...
ESR Line Intensity near the Curie Point in CdCr2Se4, HgCr2Se4, and CdCr2S4 Single Crystals On the Temperature Dependence of the Hall Effect and Electrical Resistivity of Cd, Zn, and Mg Single Crystals Time Dependent Negative Weak-Field Magnetoresistance in n-Type Lead Telluride Epitaxial Fi...
Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l06A/m. The conductivity decreases rapidly near the Curie temperature...
We report ferromagnetic resonance (FMR) lineshape and anisotropy data in the high conductivity magnetic semiconductor 1.3 mole% Ag-doped HgCr2Se4. The results are interpreted with a model of surface-type resonance including anisotropy. A crystal field theory calculation of the single ion contribution...