without the passivation layer, the interface trap density was reduced by the Al2O3passivation layer. As a result, the passivation layer effectively improved the thermal stability of the capacitor and reduced the interface trap density, compared with the sample without the passivation layer. Introducti...
In addition to the passivation of interface traps, most recently, Tang et al. reported a simultaneous reduction in the border trap density for Al2O3/n-In0.53Ga0.47As capacitors as a result of FGA9. However, this effect was not clearly noticeable in the case of the n-type In0.53Ga0.47...
Among the available HfAlO reports, most of the cases involve incorporation of Al into HfO2 by maintaining some discrete Al: Hf ratio. Therefore, it is difficult to consider the overall scenario based on Al composition. In addition to the interface state density (Dit), the border trap density...
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices. Appl. Phys. Lett. 2020, 117, 073504. [CrossRef] 18. Ryu, H.; Kim, S. Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic ...