●USG(Un-dopedSilicateGlass)SiH4+O2+Ar→USG+volatiles ●FSG(FluorosilicateGlass)SiH4+SiF4+O2+Ar→FSG+volatiles ●PSG(PhosphosilicateGlass)SiH4+PH3+O2+Ar→PSG+volatiles HDPCVD工艺的重要指标-淀积刻蚀比 如前所述,HDPCVD工艺最主要的应用也是其最显著的优势就是间隙填充, ...
根据沉积的绝缘介质掺杂与否及掺杂的种类,常见的有以下几种: (1)非掺杂硅(酸盐)玻璃(un-doped silicate glass,USG) SiH4 +O2 —→USG+挥发物 (2)氟硅(酸盐)玻璃(fluorosilicate glass,FSG) SiH4 +SiF4 +O2 —→FSG+挥发物 (3)磷硅(酸盐)玻璃(phosphosilicate glass,PSG) SiH4 +PH3 +O2 —→PSG+挥发...
15、应。根据淀积的绝缘介质掺杂与囉轡叫 t:/第六菲掺杂硅(醸盐)玻璃、(1JSG Undoped SlI icnte Glas)Sitt+ 02 + ArUSG SI硅(酸登)玻璃些甲隙宰零分 如果间隙拐角处的淀积刻蚀比远:在卿会由于缺乏足觴的刻恤而迅速 乐现成空洞,反之,如果间隙拐角处的淀积刻蚀比小于人在间隙拐角处的过度刻蚀+挥发物Www...
[0002] HDP CVD(高密度等离子体化学气相淀积)工艺淀积介质膜具有在淀积的同时进 行刻蚀的特点,能够形成无空洞的填隙,因此被广泛应用于接触孔的填隙及后道工序的介 质填隙等。该工艺用于接触孔模块时主要淀积无掺杂硅玻璃(USG)、氟硅玻璃(FSG)或是磷 硅玻璃(PSG)。 [0003] 现有的采用HDP CVD工艺淀积介质膜主要...
The results demonstrate how it is possible after film deposition to reveal from the HDPCVD USG film itself which real temperature it has been deposited at, allowing a practical method in production environment for statistical process control.
•非掺杂硅〔酸盐〕玻璃USG(Un-doped Silicate Glass) SiH4+ O2 + ArUSG+挥发物 •氟硅〔酸盐〕玻璃FSG(Fluorosilicate Glass) SiH4+ SiF4 + O2 + ArFSG+挥发物 •磷硅〔酸盐〕玻璃PSG(Phosphosilicate Glass) SiH4+PH3+O2+ArPSG+挥发物 3. 如前所述,HDP CVD工艺最主要的应用也是其最显著的优势就...
0021-01571 / SHOWERHEAD,USG,GIGA FILL / APPLIED MATERIALS AMAT 0021-01996 / ADAPTOR,TOP,CHAMBER,MARKII / APPLIED MATERIALS 0021-02155 / RING, LOWER, ISOLATOR / APPLIED MATERIALS AMAT 0021-02156 / RING, MIDDLE, ISOLATOR / APPLIED MATERIALS AMAT ...
APPLIED MATERIALS 0240-30664 WLDMNT KIT TEOS USG LIQUID IN APPLIED MATERIALS 0240-30667 CABLE KIT CHAMBER A LIQ. INJE APPLIED MATERIALS 0240-30668 CABLE KIT CHAMBER B LIQ . IN APPLIED MATERIALS 0240-30745 ELECTOSTATIC CHUCK CHAMBER KIT APPLIED MATERIALS 0240-30780 KIT, HOOP/FINGER 200MM BWCVD...