The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle magnetoresistance in single layers of Mn with weak spin-...
The magnetoresistance decreases with increasing temperature due to decreasing spin-relaxation time. (b) Nonlocal voltage as a function of perpendicular magnetic field in a spin valve. The spin precesses due to Hanle effect, which leads to the change in spin accumulation. The asymmetry is due to...
We report the Hanle magnetoresistance (HMR) due to the spin precession of edge spin accumulation and interfacial spin current. Because of spin-orbit coupling (SOC), an electric current is accompanied by a transverse spin current, which builds up the spin accumulation at surfaces of Pt and the ...
:The field of organic spintronics has taken off since the discovery of large magnetoresistance in thick organic spin valves (OSVs). The thickness of organic films (~100 nm) in these OSVs should preclude direct electron tunneling between the ferromagnetic electrodes and suggests spin injection into...
Here, we model and analyze in detail the Hanle spin precession-induced magnetoresistance for chiral/semiconductor systems and find that the signal is inverted as compared to the ferromagnetic case. We explicitly model the spin injection and detection by both a chiral system and a ferromagnetic ...
Erratum: Orbital Hanle Magnetoresistance in a 3d Transition Metal [Phys. Rev. Lett. 131, 156703 (2023)]doi:10.1103/PhysRevLett.131.239901Giacomo SalaHanchen WangWilliam LegrandPietro GambardellaPhysics Review Letter