掺杂光学性质极化强度第一性原理h-LuFeO3是一种窄带隙铁电半导体材料,已被证明在铁电光伏领域有较好的应用前景.然而,较低的极化强度使光生电子-空穴对复合率大,限制了h-LuFeO3基铁电光伏电池效率的提高.为改善h-LuFeO3的极化强度,提高光吸收性质,本文利用第一性原理计算方法研究了In原子在h-LuFeO3不同位置的...
Recently a growth of 200 nm h-LuFeO3 on YSZ using oxide molecular-beam epitaxy is reported.[31] However, a systematic study on the critical thickness to investigate the dependence on the substrate and the type of R3+ is still needed. III. THIN FILM GROWTH IN HEXAGONAL STRUCTURE The ...
Moreover, the epitaxial h-LuFeO3 thin films show room-temperature ferromagnetism. The coercive field and remnant magnetization of the epitaxial h-LuFeO3 thin film decrease with the increase in the test temperature from 50 to 300聽K. The study would be of benefit to the room-temperature ...
In this paper, the epitaxial hexagonal LuFeO3 (h-LuFeO3) thin films with c-axis-oriented single phase, smooth surface were grown on YSZ (111) substrates by pulsed laser deposition method. Furthermoredoi:10.1007/s10853-017-1469-8Zhang, Xiong...
Acute, nonenfectious enflamation which occur after intraoculer surgery due to a toxic agent in the anterior chamber is known as toxic anterior segment syndrome (TASS). It is characterized of decrease in vi...