We investigate band structure and transport property of lattice-matched graphene/hexagonal boron nitride (h-BN) heterostructure using the tight-binding approach. It shows that local potentials can significantly modify the band structure and the transport property. A method to individually manipulate the ...
Electronic structure and optical properties of realistic transition metal dichalcogenide heterostructures Komsa, Hannu-Pekka,Krasheninnikov, A... - 《Physical Review》 - 2013 - 被引量: 86 Phonon engineering in...
Photocurrent excitation spectroscopy has been employed to probe the band structure and basic parameters of hexagonal boron nitride (h-BN) epilayers synthes... TC Doan,J Li,JY Lin,... - 《Applied Physics Letters》 被引量: 9发表: 2016年 Constructing h‐BN/Bi2WO6 Quantum Dot Hybrid with Fast...
aAttached is the WI for your confirmation, Thanks. 附上WI为您的确认,感谢。[translate] aA lot of experiments and calculations have focused on the band gap energy and band structure of h-BN. 很多实验和演算集中于hBN带隙能量和带状组织。[translate]...
c, d Band structure of the graphene/h-BN moiré superlattice with θ = 0° at the K-point calculated using an effective continuum model. Calculation is performed under an c inversion symmetric model and an d inversion asymmetric model. The band structure exhibits series of bands—the ...
Real-time sensor response to different concentrations of NH3at room temperature. The inset is the relationship between normalized sensor response and low concentrations of NH3. Schematic diagrams of band alignment between the B...
micrograph of the chip showing the CS-FET. c) Local magnification of the CS-FET. d) Real-time sensor response to different concentrations of NH3 at room temperature. The inset is the relationship between normalized sensor response and low concentrations of NH3. Schematic diagrams of band ...
aA lot of experiments and calculations have focused on the band gap energy and band structure of h-BN. 很多实验和演算集中于hBN带隙能量和带状组织。 [translate] astill not received replacements. please replace or refund 仍然没被接受的替换。 请替换或退还 [translate] aI'll get divorced 我将得到...
Any change in the properties of MOs result-in a redistribution of the energy states in the band structure of the host solid. Therefore, the strain directly couples to the electronic degrees-of-freedom of the color center. The coupling strength is called deformation potential. We derive the ...
The results show that the band structure of BN has the semiconductor character with the forbidden gap of about 4.96 eV. BN optical properties reveal that the optical conductivity begins at the gap of about 2.92 eV and 6.73 eV in both parallel and perpendicular electric field polarizations, ...