GS-EVB-HB-61008P-ON 评估板是由NCP51810 门极驱动芯片驱动的两个GS61008P GaN 器件组成的半桥结构。用户可以在具有良好鲁棒性的简化布局中轻松地评估由NCP51810 驱动的GaN 器件。此评估板提供GaN器件和驱动芯片组合的最大灵活性,可用于任何需要使用上桥臂和下桥臂FET的拓扑中。
Bill of Materials NCP51810 Overview NCP51810 Datasheet DISCONTINUED 100V High-Speed GaN Half-Bridge The GS-EVB-HB-61008P-ON evaluation board consists of NCP51810 gate drive solution with two GS61008P GaN E-mode transistors in a fully-functional half bridge. It allows users to easily evaluat...