GS-065-150-1-D2 650V增强型氮化镓晶体管 GS-065-150-1-D2是增强型硅基功率氮化镓晶体管,具有高电流、高击穿电压、高开关频率的特性。氮化镓系统采用Island Technology®的专利芯片布局,以增强高电流器件的性能及良率。这些特征大大提升了功率转换的效率。 Island Technology®超低FOM 简易门极驱动条件 门极...
GS-065-150-1-D2 是一款增强型硅基氮化镓功率晶体管。 GaN 的特性允许高电流和高开关频率。 GS-065-150-1-D2 是一款高性能 GaN 芯片,设计用于高功率应用的电源模块,例如车载和非车载电动汽车充电器、牵引驱动、工业电源和可再生能源系统。 特征描述 增强型 HEMT – 常闭 超快开关 无反向恢复电荷 具...
The GS-065-150-1-D2 is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®cell layout for high-current die performance & yiel...
The GS-065-150-1-D2 is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-150-1-D2 is a high performing GaN die designed for use in power modules for high power applications such as on-board ...
The GS-065-150-1-D2 is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-150-1-D2 is a high performing GaN die designed for use in power modules for high power applications such a...