GS-065-008-1-L-TR 是一款增强型硅基 GaN功率晶体管。 GaN 的特性允许高电流、高电压击穿和高开关频率。 GS-065-008-1-L-TR 是一款采用 5×6 mm PDFN 封装的底部冷却晶体管,可实现现代 USB-C 适配器和充电器或其他低功耗应用所需的理想功耗。
The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®cell layout for high-current die performance & yield. The GS-065-008...
英飞凌的GaN晶体管在高达 700 V 的电压范围内可实现高效的功率转换。我们的GaN器件具有快速的导通/关断速度、最小的开关损耗和多种封装选择,能够简单快速地将产品推向市场。这些器件不仅符合广泛标准,还超越行业标准。GaN技术大大提高了系统的整体性能,并最大限度地降低了系统成本,提高了易用性。
GS-065-008-6-L-TRCoolGaN™晶体管700 V G4,具有极高的效率和可靠性 The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. ...
The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal ...
The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it...