GS-065-008-1-L是增强型硅基氮化镓功率晶体管。 氮化镓的特性允许大电流,高电压和高开关频率。 氮化镓系统 (GaN Systems) 采用具有专利岛技术®的单元布局实现大电流晶片性能和良率。 GS-065-008-1-L是一款5×6毫米 PDFN封装的底部散热晶体管,可为要求苛刻的高功率应用提供极低的结至外壳热阻。 这些功能结...
GS-065-008-1-L-TR 是一款增强型硅基 GaN功率晶体管。 GaN 的特性允许高电流、高电压击穿和高开关频率。 GS-065-008-1-L-TR 是一款采用 5×6 mm PDFN 封装的底部冷却晶体管,可实现现代 USB-C 适配器和充电器或其他低功耗应用所需的理想功耗。
The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ...
The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®cell layout for high-current die performance & yield. The GS-065-008...
The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ...
The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal ...