Growth of graphene on h-BN is a form of van der Waals epitaxy. Raman spectra of single layer graphene nanodomains. AFM images and Raman maps reveal non-uniform coverage of the grown graphene.doi:10.1016/j.ssc.2012.04.005Jorge M. Garcia...
因此通过将六方氮化硼与其他二维材料进行复合形成异质结以结合两种材料的优点和特性,也是现在研究的热点之一。将氮化硼BN和石墨烯进行单原子层的复合,从而利用BN的绝缘性能和石墨的导电能力,吸引了工业界和科学界的广泛注意。通过CVD或者外延生长的方法,都可以实现异质结的形成。 石墨烯/h-BN异质结3种不同的堆积方式...
近年来,石墨烯(graphene)、二硫化钼(MoS2)和六方氮化硼(h-BN)等具有层状晶体结构的二维材料因其独特的能带结构和丰富的物理化学特性,在电子学、光电子学和能源转换等领域具有非常广阔的应用前景。二硒化钒(VSe2)和二硒化铌(NbSe2)等金属性过渡金属硫族化合物(MTMDCs)作为一类新兴的二维层状材料,因为其所蕴含的...
六方氮化硼与石墨烯复合形成异质结(h-BN/Graphene)的表征图 西安齐岳生物科技有限公司供应氮化硼粉末、单层、少层氮化硼,六方氮化硼纳米片、各种基底CVD生长的氮化硼(c-BN)薄膜、原子掺杂六方氮化硼、以及合成六方氮化硼、石墨烯、二硫化钼等形成异质结复合材料。 异质结是两种不同的半导体相接触所形成的界面区域,...
二硫化钼(MoS2)/六方氮化硼(h-BN)/石墨烯(Graphene)异质结构 西安瑞禧生物科技有限公司经营的产品种类包括有:合成磷脂、高分子聚乙二醇衍生物、嵌段共聚物、磁性纳米颗粒、纳米金及纳米金棒、近红外荧光染料、活性荧光染料、荧光标记的葡聚糖BSA和链霉亲和素、蛋白交联剂、小分子PEG衍生物、点击化学产品、树枝状聚合物...
The aspect ratio is measured based on nanopockets located in the center of tBLG drumhead so that the stretch to the nanopockets caused by the pressurization is relatively uniform. For each nanopocket, the radius a and bubble height h were taken along three directions, from which the average...
H. & Cho, J.-H. Physisorption of DNA nucleobases on h-BN and graphene: vdW-corrected DFT calculations. J. Phys. Chem. C 117, 13435–13441 (2013). CAS Google Scholar Antony, J. & Grimme, S. Structures and interaction energies of stacked graphene–nucleobase complexes. Phys. Chem. ...
Current research has shown that graphene, h-BN and MoS2 layered materials modified with metal oxide can have an insightful influence on the performance of energy storage devices as supercapacitors and batteries. This review article also contains the discussion on the opportunities and perspectives of ...
(blue) regions on a SiO2/Si substrate using a 532-nm laser.dPL spectra of graphene (red), h-BN (blue) regions, and interface (green) using a 266-nm laser.e,fRaman and PL mapping images of the 2D band (2630–2730 cm−1) and 410 nm wavelength, respectively, for the area ...
As h-BN has a flat surface free of dangling bonds and charge impurities, the carrier scattering in graphene/h-BN can be greatly reduced. Compared to suspended graphene, graphene on h-BN has a physical support to avoid the mechanical collapsing, thus facilitates the subsequent processing. For ...